Zobrazeno 1 - 10
of 19
pro vyhledávání: '"JJ Beulens"'
Autor:
T. E. F. M. Standaert, M. Schaepkens, P. J. Matsuo, N. R. Rueger, JJ Beulens, Gottlieb S. Oehrlein, Xi Li
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3272-3280
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50ec25b6eff2335812964c8e91d3550
https://doi.org/10.1116/1.582054
https://doi.org/10.1116/1.582054
Autor:
M. Schaepkens, N. R. Rueger, M. F. Doemling, T. E. F. M. Standaert, JJ Beulens, Gottlieb S. Oehrlein
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2492-2502
Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor (ICP). Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9e1278c24db730a237318056df5973
https://doi.org/10.1116/1.581987
https://doi.org/10.1116/1.581987
Publikováno v:
Acta Physica Polonica A. 94:3-12
We study the intensity distribution of the A 2Δ-Χ2Π system of CH molecule at 430 nm in a low pressure plasma jet. This system shows an overlap of vibrational bands with Δν = 0. By comparing simulated and experimental emission spectra, we obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b1f8a5b70322752fe871ddf9a5f3a46
https://doi.org/10.12693/aphyspola.94.3
https://doi.org/10.12693/aphyspola.94.3
Autor:
JJ Beulens, M. Schaepkens, N. R. Rueger, T. E. F. M. Standaert, J. M. Mirza, Gottlieb S. Oehrlein, M. F. Doemling
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1881-1889
It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is enco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a77f5d5bdfafae319f3c6109a3efd4
https://doi.org/10.1116/1.580655
https://doi.org/10.1116/1.580655
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1801-1813
The remote plasma chemical dry etching of polycrystalline silicon was investigated using various CF4/O2/N2 gas compositions. The effects of O2 and N2 addition on the etch rate and surface chemistry were established. Admixing O2 to CF4 increases the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1762334656ad0f75567e8367a364ea
https://doi.org/10.1116/1.580795
https://doi.org/10.1116/1.580795
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2802-2813
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e7993db40edf8c50d069e69a9c7dc6
https://doi.org/10.1116/1.580203
https://doi.org/10.1116/1.580203
Publikováno v:
Plasma Chemistry and Plasma Processing. 14:15-42
A supersonically expanding cascaded arc plasma in argon is analyzed axperimentally by emission spectroscopy. The thermal cascaded arc plasma is allowed to expand through a conically shaped nozzle in the arc anode into the vacuum vessel. In the nozzle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f070662e17656995bb0b282ee1e7faf5
https://doi.org/10.1007/bf01448735
https://doi.org/10.1007/bf01448735
Publikováno v:
Journal of Nuclear Materials, 200(3), 430-433. Elsevier
A new plasma deposition technique is described. In this method a high density and strongly flowing argon plasma is admixed with monomers such as CH/sub 4/, C/sub 2/H/sub 2/, SiH/sub 4/, etc. Through effective charge transfer and dissociative recombin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fb1bf5e6b92ade08864993d7852d784
https://doi.org/10.1016/0022-3115(93)90322-p
https://doi.org/10.1016/0022-3115(93)90322-p
Publikováno v:
Surface and Coatings Technology. 47:401-417
In this work a strongly flowing cascaded arc burning on an argon-hydrogen mixture is used to dissociate and ionize hydrocarbons which are injected inside a nozzle which is mounted in the anode of the arc. The thermal plasma ( T ≈ 10 000 K , p ≈ 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a68d2756ebe8a8fe01b2a13ac3482022
https://doi.org/10.1016/0257-8972(91)90306-h
https://doi.org/10.1016/0257-8972(91)90306-h
Publikováno v:
Journal of Quantitative Spectroscopy and Radiative Transfer, 46(5), 385-392. Elsevier
We have calculated the total radiative loss in an argon plasma at wavelengths from 100 nm to 100 μm (zero absorption) as a function of temperature (3000–15,000 K) for several pressures (10-1 × 106Pa) under LTE and non-LTE conditions. The investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96d86ec1f6131064f603140b754fbf28
https://doi.org/10.1016/0022-4073(91)90040-w
https://doi.org/10.1016/0022-4073(91)90040-w