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pro vyhledávání: '"JI Xue Jian-geng"'
Publikováno v:
Chinese Physics Letters. 14:609-612
By using synchrotron radiation photoelectron spectroscopy, the band lineup of Ge/CdTe(111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe(111) interface grown at room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1570abf8d1018bf4ca23e16f299be0
https://doi.org/10.1088/0256-307x/14/8/013
https://doi.org/10.1088/0256-307x/14/8/013
