Zobrazeno 1 - 10
of 356
pro vyhledávání: '"JENN-GWO HWU"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 960-969 (2022)
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance $({C})$ and conductance $({G})$ was studied in this work. A model to calculate MIS device’s ${C}$ and ${G}$ under the considerations of oxide charges, dop
Externí odkaz:
https://doaj.org/article/a9e9557c3c4b4e2caba711884291f0ae
Publikováno v:
IEEE Access, Vol 9, Pp 163929-163937 (2021)
Current and capacitance characteristics of Al/SiO2/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) with oxide thickness in the range of about 2–4 nm were fabricated and studied in detail in this work. We found that the saturation reverse b
Externí odkaz:
https://doaj.org/article/e9f2fd4e5c3742bab5dd36b29d3e3672
Autor:
Sung-Wei Huang, Jenn-Gwo Hwu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1041-1048 (2021)
The metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate (UTMSG) have been found to have improved transient current behavior, and the improvement is proportional to the area of the surrounding gate. The resistance induced
Externí odkaz:
https://doaj.org/article/13b826291ebd4937a985392abdf49443
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045116-045116-6 (2022)
Coupling phenomenon between two Al/SiO2/Si(p) metal–insulator–semiconductor (MIS) tunneling diodes (TD) with various thin oxide thicknesses was studied in detail. When the bias voltage at one MIS TD is positive enough, the saturation currents of
Externí odkaz:
https://doaj.org/article/3059d39f9c3f485796c7084f99bd640f
Autor:
Bo-Jyun Chen, Jenn-Gwo Hwu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 825-833 (2020)
The effects of an Al2O3 dielectric patterned by wet etching in a metal-insulator-semiconductor (MIS) tunnel diode are studied by I-V, C-V and charge storage characteristics in this paper. The behaviors are obviously different from the device without
Externí odkaz:
https://doaj.org/article/83e86df4db9b45b298888ebf7505a60b
Autor:
Kung-Chu Chen, Jenn-Gwo Hwu
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105002-105002-6 (2020)
Coupling sensitivity between two Al–SiO2–pSi metal–insulator–semiconductor tunnel diodes (MISTDs) was examined by sweeping bias voltage on one MISTD and detecting ground current or floating voltage at another nearby MISTD with the substrate b
Externí odkaz:
https://doaj.org/article/b3b6e328af0a43d8ba495fb76040a2d2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 424-429 (2016)
An efficient way to reduce the loss of stored charge in a memory cell was proposed in this paper. Conventionally, the storage structure is stressed by applying voltages during the read operation. By structurally separating the read operation from the
Externí odkaz:
https://doaj.org/article/70ea85100703499c9cc7b73dc10aa423
Autor:
Chang-Feng Yang, Jenn-Gwo Hwu
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125017-125017-7 (2016)
Due to the simplicity of the fabrication process, the ultra-thin oxide metal-oxide-semiconductor capacitors (MOSCAPs) can be a promising device for sensing, memory, and transconductance applications. The investigation of the fundamental electrical ch
Externí odkaz:
https://doaj.org/article/c6be6120eab0471b838128b4fc1a6c60
Autor:
Chin-Sheng Pang, Jenn-Gwo Hwu
Publikováno v:
AIP Advances, Vol 4, Iss 4, Pp 047112-047112-10 (2014)
In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electr
Externí odkaz:
https://doaj.org/article/6fb09d56daeb439cb537b8802b0c30aa
Autor:
Chien-Wei Lee, Jenn-Gwo Hwu
Publikováno v:
AIP Advances, Vol 3, Iss 10, Pp 102123-102123-18 (2013)
We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion
Externí odkaz:
https://doaj.org/article/6511df3e5d8d4ae59ebfbbe3531b328e