Zobrazeno 1 - 10
of 549
pro vyhledávání: '"JEAN-PIERRE RASKIN"'
Autor:
Nicolas Roisin, Guillaume Brunin, Gian-Marco Rignanese, Denis Flandre, Jean-Pierre Raskin, Samuel Poncé
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-11 (2024)
Abstract Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mo
Externí odkaz:
https://doaj.org/article/7ada9c1c34df4749a2097875649d6011
Autor:
Sahar Jaddi, M. Wasil Malik, Bin Wang, Nicola M. Pugno, Yun Zeng, Michael Coulombier, Jean-Pierre Raskin, Thomas Pardoen
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Fail-safe design of devices requires robust integrity assessment procedures which are still absent for 2D materials, hence affecting transfer to applications. Here, a combined on-chip tension and cracking method, and associated data reductio
Externí odkaz:
https://doaj.org/article/69e41d9669a042af814cce2b420f62df
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 322-330 (2024)
Understanding and mitigation of substrate RF losses and signal distortion are critical to enable high-performance GaN-on-Si front-end-modules. While the origin of RF losses and consequently a decreased effective substrate resistivity $({\rho }_{eff})
Externí odkaz:
https://doaj.org/article/f03022e5913c448999ae5a41e212c744
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 650-657 (2023)
Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOS-based applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compac
Externí odkaz:
https://doaj.org/article/617cd55939e5468097b07496546d68a5
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Autor:
Dimitri Lederer, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic
Externí odkaz:
https://doaj.org/article/163c694c2dc342d0a1506e1a1af11130
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the
Externí odkaz:
https://doaj.org/article/bb25f02d508f4ec79da8c09b27d3b6b5
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of
Externí odkaz:
https://doaj.org/article/b790bd925fd043c494606b102a0bb4eb
Autor:
Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for highfrequency (reaching cutoff frequencies close to 500 GHz forn-MOSFETs) and for harsh environments (high temperature,radiation) commercial applic
Externí odkaz:
https://doaj.org/article/9dcd066f33644f4391ffecae560c545e
Publikováno v:
Materials Today Advances, Vol 18, Iss , Pp 100366- (2023)
Off-stoichiometric copper-chromium delafossite featuring giant catalytic degradation of ozone is demonstrated for the very first time. This leads to the reversible low-temperature detection of ozone onto resistive thin-film devices to values as low a
Externí odkaz:
https://doaj.org/article/9ef3723cdec54d18bd3a71808e92d23a