Zobrazeno 1 - 10
of 206
pro vyhledávání: '"JAN HERMANS"'
Autor:
Richard J. F. van Haren, Steffen Steinert, Orion Mouraille, Ewa Kasperkiewicz, Jan Hermans, Mahmudul Hasan, Leon van Dijk, Dirk Beyer
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b58edd6d495d0501ec470bf3edd9dd3
https://doi.org/10.1117/12.2641618
https://doi.org/10.1117/12.2641618
Autor:
Richard J. F. van Haren, Oktay Yildirim, Orion Mouraille, Leon van Dijk, Kaushik Kumar, Yannick Feurprier, Christiane Jehoul, Jan Hermans
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44fcde2d79357cfaadc00795a7cf23c
https://doi.org/10.1117/12.2614255
https://doi.org/10.1117/12.2614255
Autor:
Leon van Dijk, Yannick Feurprier, Richard Johannes Franciscus Van Haren, Oktay Yildirim, Orion Mouraille, Kaushik A. Kumar, Jan Hermans
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
Recently, the etch induced on-product overlay contribution as part of the total on-product overlay budget has received more attention. The main reason for this is that the etch induced overlay penalties are comparable to or even exceeding the state-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962ee0fe122d096eba8f83d88e99d589
https://doi.org/10.1117/12.2584311
https://doi.org/10.1117/12.2584311
Autor:
Leon van Dijk, Jan Hermans, Richard Johannes Franciscus Van Haren, Orion Mouraille, Steffen Steinert, Dirk Beyer
Publikováno v:
Photomask Technology 2020.
Over the past few years, we have spent quite some effort to demonstrate that the off-line mask-to-mask overlay as determined on the PROVE tool correlates very well with the on-wafer overlay as measured by the scanner. The role and placement of the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d86a36d95a2d418683b27250fb2f52d
https://doi.org/10.1117/12.2573190
https://doi.org/10.1117/12.2573190
Autor:
Yannick Feurprier, Richard Johannes Franciscus Van Haren, Jan Hermans, Orion Mouraille, Kaushik A. Kumar, Leon van Dijk, Oktay Yildirim
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
The etch induced on-product overlay performance across wafer has received quite some attention recently. Global wafer overlay penalties have been observed by realizing that the etch direction is not always perpendicular to the wafer surface and may v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7adf1dfb4d390c12ab27819bca7db2c6
https://doi.org/10.1117/12.2552051
https://doi.org/10.1117/12.2552051
Autor:
Richard Johannes Franciscus Van Haren, Orion Mouraille, Koen D'havé, Dirk Beyer, Jan Hermans, Leon van Dijk, Steffen Steinert
Publikováno v:
Photomask Technology 2019.
It has been demonstrated that the mask-to-mask overlay contribution can be fully characterized by off-line measurements on the PROVE mask registration tool. This characterization includes the impact of the marks that are used for reticle alignment in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d6f64caecd85e4bb07e2f731b017e4
https://doi.org/10.1117/12.2536270
https://doi.org/10.1117/12.2536270
Autor:
Richard Johannes Franciscus Van Haren, Jan Hermans, Steffen Steinert, Orion Mouraille, Koen D'havé, Dirk Beyer, Leon van Dijk
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
The mask-to-mask writing error contribution as part of the on-wafer intra-field overlay performance has been extensively studied over the past few years. An excellent correlation (R2 > 0.96) was found between the off-line registration measurements by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063a93680e274d507a5e9e48f39b1668
https://doi.org/10.1117/12.2535900
https://doi.org/10.1117/12.2535900
Autor:
Richard Johannes Franciscus Van Haren, Yajun Gu, Amandev Singh, Doug Anberg, Leon van Dijk, Jeffrey Mileham, David M. Owen, Ronald Otten, Subodh Singh, Jan Hermans
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
One of the contributors to layer-to-layer overlay in today’s chip manufacturing process is wafer distortion due to thin film deposition. Mismatch in the film specific material parameters (e.g., thermal expansion coefficients) may result in process-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ae4469171ecd25b64a290a2d8d54843
https://doi.org/10.1117/12.2515391
https://doi.org/10.1117/12.2515391
Autor:
Igor Matheus Petronella Aarts, Robert John Socha, Chris de Ruiter, Manouk Rijpstra, Krishanu Shome, Sudhar Raghunathan, Jonathan Y. Lee, Leendertjan Karssemeijer, Jan Hermans, Boris Menchtchikov, Philippe Leray, Chumeng Zheng, Ralph Brinkhof, Floris Teeuwisse, Henry Megens, Chung-Tien Li, Irina Lyulina
Publikováno v:
Optical Microlithography XXXI
Three methods to minimize the impact of alignment mark asymmetry on overlay variation are demonstrated. These methods are measurement based optimal color weighting (OCW), simulation based optimal color weighting, and wafer alignment model mapping (WA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bf79f4985432843b457fcd33d09e422
https://doi.org/10.1117/12.2297493
https://doi.org/10.1117/12.2297493