Zobrazeno 1 - 10
of 14
pro vyhledávání: '"JAEYUN YI"'
Autor:
Jaeyun Yi
Publikováno v:
Journal of Theoretical Probability. 36:926-947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6f938c2c76abd3c597ce8b1820ab8b
https://doi.org/10.1007/s10959-022-01198-6
https://doi.org/10.1007/s10959-022-01198-6
Publikováno v:
SIAM Journal on Mathematical Analysis; 2023, Vol. 55 Issue 6, p7665-7703, 39p
Autor:
Kunwoo Kim, Jaeyun Yi
We study limit theorems for time-dependent averages of the form $X_t:=\frac{1}{2L(t)}\int_{-L(t)}^{L(t)} u(t, x) \, dx$, as $t\to \infty$, where $L(t)=\exp(\lambda t)$ and $u(t, x)$ is the solution to a stochastic heat equation on $\mathbb{R}_+\times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20351c69c364f6d174c86b7f6b36498e
http://arxiv.org/abs/2009.09658
http://arxiv.org/abs/2009.09658
Autor:
Hyejung Choi, Jinkook Kim, Hyun Min Lee, Jaeyun Yi, Eung-Rim Hwang, Jeongho Song, Tae-Hoon Kim, Donghoon Kim, Su Jin Chae, Myoungsub Kim, Chang-Youn Hwang, Yun-Seok Chun, Sunglae Cho
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We demonstrate a high-performance and cost-effective cross-point memory (CPM) technology for two-deck 128 Gb storage class memory (SCM). The unit MAT size is 16 Mb consisting of a 2z nm 1S1M (one selector one memory) structure that is patterned by on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd6f7fd54d04a598e42ca78cad2d4b6
https://doi.org/10.1109/iedm.2018.8614680
https://doi.org/10.1109/iedm.2018.8614680
Autor:
Jae-Sung Roh, Sung Joo Hong, Donghee Son, Seung Hwan Lee, Moon-Sig Joo, Jinwon Park, Jaeyun Yi, Jae-yeon Lee, Sang-Min Hwang, Jungwoo Park, Sunghoon Lee, Ja-Yong Kim, Sung-Woong Chung, Sungki Park, Seok-Pyo Song, Hyejung Choi, Junghoon Rhee, Sangkeum Lee, Jiwon Moon, Suk-Ju Kim, Choi-Dong Kim
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adc9ded21786bd5e0a511d35d48cfb4a
https://doi.org/10.1109/imw.2011.5873243
https://doi.org/10.1109/imw.2011.5873243
Autor:
Donghee Son, Sung-Joo Hong, Seok-Pyo Song, Sungwook Park, Wangee Kim, Hyejung Choi, Min Gyu Sung, Jinwon Park, Jae-Sung Roh, Jae-Goan Jeong, Moon-Sig Joo, Jungwoo Park, Jaeyun Yi, Jiwon Moon, Sunghoon Lee, Choi-Dong Kim, Sangkeum Lee, Sung-Woong Chung, Sungki Park
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
ReRAM has been researched as a promising candidate for diverse NVM application [1]. Still switching mechanism and classification are not clear, there are simply two kinds of switching polarity: unipolar and bipolar. Considering distribution, operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ec25ac208af242c6a3950791623b2b
https://doi.org/10.1109/vtsa.2011.5872232
https://doi.org/10.1109/vtsa.2011.5872232
Autor:
Y.-H. Seo, Sung-Woong Chung, G.-J. Park, J.-S. Rho, Hyun Mi Hwang, Adrian E. Ong, Ju-Rak Kim, Jung-Lae Park, Mun-Haeng Lee, Suk-Chul Kim, D.-H. Jung, K.-M. Rho, Vladimir Nikitin, Sung-Hyuk Cho, J.-G. Jeong, Sung-Hyung Park, Juyeab Lee, Suock Chung, H.-J. Suh, X. Tang, Dojin Kim, Y.-B. An, A. Driskill-Smith, Yong-ki Kim, Sang-Min Hwang, Jaeyun Yi, Sung-Buk Lee, Hong-Gi Kim, S. J. Hong, Gyu-An Jin
Publikováno v:
2010 International Electron Devices Meeting.
A compact STT(Spin-Transfer Torque)-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54nm technology node. The basic switching performance (R-H and R-V) of the MTJs and current drivability of the access transistors were charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48937707bcf5efd233103a984a18c72e
https://doi.org/10.1109/iedm.2010.5703351
https://doi.org/10.1109/iedm.2010.5703351
Autor:
Jaeyun Yi, Yun-Taek Hwang, Sung-Woong Chung, Sung-Woo Kim, Sung-Joo Hong, Sungwook Park, Yoshio Nishi
Publikováno v:
2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Resistive random access memory (ReRAM) has drawn lots of attention for nonvolatile memories. Among various resistive switching materials and phenomena, solid state electrolytes, such as copper sulfide and Ag-Ge-Se devices, show interesting properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bceaf1c327a049277f2d71bd54b29318
https://doi.org/10.1109/nvmt.2008.4731189
https://doi.org/10.1109/nvmt.2008.4731189
Autor:
Hyejung Choi, Jaeyun Yi, Sangmin Hwang, Sangkeum Lee, Seokpyo Song, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Jinwon Park, Suk-Ju Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moon, Choidong Kim, Jungwoo Park, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Junghoon Rhee
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW); 2011, p1-4, 4p
Publikováno v:
Mathematics, Vol 10, Iss 13, p 2177 (2022)
In general, it is not easy work to design controllers and observers for high-order nonlinear systems. Planar motors that are applied to semiconductor wafer-stage processes have 14th-order nonlinear dynamics and require high resolution for position tr
Externí odkaz:
https://doaj.org/article/8f810f112f884e379134f2944655f281