Intrinsic ESD robustness on new high voltage N/PMOS devices in 28 nm FDSOI UTBB CMOS technology through TLP/VFTLP characterizations

Autor: Galy, Ph., Jacquier, B., Haendler, S.

Publikováno v: In Microelectronics Reliability November 2021 126

Inhomogeneous Gain Saturation in EDF: Experiment and Modeling

Autor: Peretti, Romain, Jacquier, B., Boivin, David, Burov, Ekatarina, Jurdyc, Anne-Marie

Publikováno v: Journal of Lightwave Technology / IEEE/OSA Journal of Lightwave Technology; IEEE Journal of Lightwave Technology 29, 10 (2011) 1445 - 1452

Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental meth

Externí odkaz: http://arxiv.org/abs/1104.5302

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node

Autor: Bourgeat, J., Galy, P., Dray, A., Jimenez, J., Marin-Cudraz, D., Jacquier, B.

Publikováno v: In Microelectronics Reliability September-November 2011 51(9-11):1614-1617

Spectroscopic signature of phosphate crystallization in erbium-doped optical fibre preforms

Autor: Peretti, R., Jurdyc, A.M., Jacquier, B., Blanc, W., Dussardier, B.

Publikováno v: In Optical Materials 2011 33(6):835-838

Synthesis and physico-chemical characteristics of nanosized particles produced by laser ablation of a nickel target in water

Autor: Mahfouz, R., Cadete Santos Aires, F.J., Brenier, A., Jacquier, B., Bertolini, J.C.

Publikováno v: In Applied Surface Science 2008 254(16):5181-5190