Zobrazeno 1 - 10
of 29
pro vyhledávání: '"J.Y.T. Huang"'
Autor:
J.Y.T. Huang, Carmen S. Menoni, Jeng-Ya Yeh, Lifang Xu, Nelson Tansu, Dinesh Patel, Jon M. Pikal, Luke J. Mawst
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 6, Pp 2382-2389 (2012)
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::806efd43b8c249eee408515136c79512
https://doi.org/10.1109/jphot.2012.2233465
https://doi.org/10.1109/jphot.2012.2233465
Autor:
Gregory Belenky, Igor Vurgaftman, J.Y.T. Huang, Smita Jha, Jerry R. Meyer, Leon Shterengas, Thomas F. Kuech, Luke J. Mawst, D. Wang
Publikováno v:
Journal of Crystal Growth. 310:4839-4842
GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21060602656536b0d6a2e2b6cbd166ca
https://doi.org/10.1016/j.jcrysgro.2008.08.026
https://doi.org/10.1016/j.jcrysgro.2008.08.026
Autor:
M. K. Rathi, Susan E. Babcock, Jerry R. Meyer, Igor Vurgaftman, J.Y.T. Huang, A.A. Khandekar, Xueyan Song, Luke J. Mawst, Thomas F. Kuech
Publikováno v:
Journal of Crystal Growth. 310:4826-4830
GaAs-based heterostructures comprised of GaAs1−xNx–GaAs1−ySby (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63fc6c4f2553db3905fb3187864d0817
https://doi.org/10.1016/j.jcrysgro.2008.09.006
https://doi.org/10.1016/j.jcrysgro.2008.09.006
Autor:
C.A. Paulson, Thomas F. Kuech, D.P. Xu, Susan E. Babcock, J.Y.T. Huang, Jihye Park, Luke J. Mawst, Xueyan Song
Publikováno v:
Journal of Crystal Growth. 310:2377-2381
The effects of thermal annealing on the emission and microstructural characteristics of GaAs 0.88 Sb 0.10 N 0.02 /InP multiple quantum well (QW) structures were studied by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88e91efec9b3d25fdc9ba8259b40eb6
https://doi.org/10.1016/j.jcrysgro.2007.11.018
https://doi.org/10.1016/j.jcrysgro.2007.11.018
Publikováno v:
Journal of Crystal Growth. 310:2382-2389
The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs 1− y − z Sb y N z /InP multi-quantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs 1− y Sb y layers was obse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f8b7b599b44b0ab5cc0390d0236de8
https://doi.org/10.1016/j.jcrysgro.2007.11.207
https://doi.org/10.1016/j.jcrysgro.2007.11.207
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:979-991
Dilute nitride Ga(In)NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates have been grown by metal-organic chemical vapor deposition (MOCVD). Design studies underscore the importance of nitrogen incorporation to extend the emission wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81aaecfffedf157d420e96aaec90d5e6
https://doi.org/10.1109/jstqe.2008.918105
https://doi.org/10.1109/jstqe.2008.918105
Autor:
Susan E. Babcock, Thomas F. Kuech, Igor Vurgaftman, Jerry R. Meyer, Luke J. Mawst, J. H. Park, Xueyan Song, J.Y.T. Huang, D.P. Xu
Publikováno v:
Journal of Physics D: Applied Physics. 40:7656-7661
Pseudomorphic GaAs1?ySby quantum wells with 0.16 ? y ? 0.69 on (0?0?1) InP substrates have been grown using metal?organic chemical vapour deposition. High resolution x-ray diffraction and transmission electron microscopy analysis are used to quantify
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ec5b3fcf07ee9aae847e658ff3fd6e
https://doi.org/10.1088/0022-3727/40/24/010
https://doi.org/10.1088/0022-3727/40/24/010
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:1324-1331
Using a modified, O2-enhanced nonselective wet thermal oxidation process, deep-etched ridge waveguides in AlGaAs heterostructures containing lambda = 808 nm InAlGaAs single quantum well or aluminum-free lambda = 1.3 mum GaAsP/InGaAsN dilute nitride m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b56206d280a28947a3c6a731dc65a2
https://doi.org/10.1109/jstqe.2007.905097
https://doi.org/10.1109/jstqe.2007.905097
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:1065-1073
A GaAsSbN-GaAsSb-InP type-II ldquoWrdquo quantum well (QW) structure is proposed for achieving emission in the mid-infrared (IR) wavelength region. Simulation studies based on the band anticrossing model and a 10-band k-p Hamiltonian demonstrate that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dea719030c9f724503c7d419204b7c9
https://doi.org/10.1109/jstqe.2007.902831
https://doi.org/10.1109/jstqe.2007.902831
Publikováno v:
2007 Conference on Lasers and Electro-Optics (CLEO).
GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f0cd95e000a17e659afe1a47bbc179
https://doi.org/10.1109/cleo.2007.4452601
https://doi.org/10.1109/cleo.2007.4452601