Zobrazeno 1 - 10
of 139
pro vyhledávání: '"J.Y. Laval"'
Autor:
Sergio I. Molina, Elisa Guerrero, Pedro L. Galindo, J. Pizarro, J.Y. Laval, Sławomir Kret, A. Yáñez, Teresa Ben, Ana M. Sanchez
Publikováno v:
Ultramicroscopy. 107:1186-1193
Strain mapping is defined as a numerical image-processing technique that measures the local shifts of image details around a crystal defect with respect to the ideal, defect-free, positions in the bulk. Algorithms to map elastic strains from high-res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d324dfff8c660b128b2cb79073a4716
https://doi.org/10.1016/j.ultramic.2007.01.019
https://doi.org/10.1016/j.ultramic.2007.01.019
Publikováno v:
Materials Science and Engineering: A. :661-665
The effect of the combination of two different additions on NiTi shape memory alloy is not straightforward. In order to investigate the effect of Hf and Cu additions on the martensitic transformation, a set of five alloys has been prepared with the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4dc9218c999e5f0d6838e18320c088b
https://doi.org/10.1016/j.msea.2006.02.114
https://doi.org/10.1016/j.msea.2006.02.114
Publikováno v:
Philosophical Magazine
Philosophical Magazine, Taylor & Francis, 2006, 86 (15), pp.2151-2161. ⟨10.1080/14786430600640478⟩
Philosophical Magazine, Taylor & Francis, 2006, 86 (15), pp.2151-2161. ⟨10.1080/14786430600640478⟩
International audience; Germanium quantum dots were grown by Ultra High Vacuum Chemical Vapour Deposition on {100} silicon substrate. Two types of heterostructures were studied: single islands randomly grown on silicon as well as stacking islands gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bb3ce3739b7905df94f5500d912b312
https://doi.org/10.1080/14786430600640478
https://doi.org/10.1080/14786430600640478
Publikováno v:
The European Physical Journal Applied Physics. 34:107-116
The local electric behaviour of IMPATT diodes was studied by scanning transmission electron beam induced current in cross-section method (X-STEBIC). This technique of induced current measurement makes it possible to probe the depletion zone of a junc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ecd04eff29e3dddb864205a4ed154c
https://doi.org/10.1051/epjap:2006042
https://doi.org/10.1051/epjap:2006042
Publikováno v:
Computational Materials Science. 29:379-395
In this paper the field theory of dislocations is used in the finite element analysis of residual stresses in epitaxial layers. By digital processing of the HRTEM image of a GaAs/ZnTe/CdTe system the tensor maps of dislocation distribution are extrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba8d76755766aa1073e21d9d3652570
https://doi.org/10.1016/j.commatsci.2003.10.012
https://doi.org/10.1016/j.commatsci.2003.10.012
Publikováno v:
Philosophical Magazine. 83:231-244
Tensorial maps of misfit dislocations at the strained GaAs-ZnTe-CdTe interfacial zone are reconstructed by use of digital processing of high-resolution transmission electron micrographs. Large distortions of the crystal lattice around Lomer dislocati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f378534629fa30b389d7529e5bb71713
https://doi.org/10.1080/0141861021000020095
https://doi.org/10.1080/0141861021000020095
Publikováno v:
Microscopy and Microanalysis. 8:312-318
The continuous displacement field within elastically relaxed GaInAs islands was calculated from digitized HREM images of {110} cross sections of In0.35Ga0.65As layers grown on GaAs by molecular beam epitaxy. Experimental maps of the deformations para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e70fa1fc4376c55a01a635d3b7515116
https://doi.org/10.1017/s1431927602020251
https://doi.org/10.1017/s1431927602020251
Publikováno v:
Physica C: Superconductivity. 329:231-242
BiSrCaCuO thin films and specially Bi-2212 compounds were grown on (100) SrTiO 3 substrates by molecular beam epitaxy (MBE). The growth mechanism was controlled in real time by monitoring the RHEED intensity. The deposition sequence of the elements w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2c0fdca099a5f52a909b9504fbcdc32
https://doi.org/10.1016/s0921-4534(99)00596-1
https://doi.org/10.1016/s0921-4534(99)00596-1
Publikováno v:
Journal of Applied Physics. 86:1988-1993
Lattice distortions in three-dimensional coherent In0.35Ga0.65As islands grown by molecular beam epitaxy at 510 °C on GaAs have been imaged by high resolution electron microscopy. The strain fields are determined from the corresponding digital image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8cbc772981a363745fbb6814525398
https://doi.org/10.1063/1.370998
https://doi.org/10.1063/1.370998
Publikováno v:
Materials Science Forum. :649-652
The 2D-3D transition of the growth mode of highly strained In x Ga 1-x As layers on {100} GaAs was observed by HREM. Local deformations were measured by image processing of HREM {110} projections. e x and e z deformation mappings of In x Ga 1-x As is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23864da7d3f890dafaf0a253b97cdfe1
https://doi.org/10.4028/www.scientific.net/msf.294-296.649
https://doi.org/10.4028/www.scientific.net/msf.294-296.649