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pro vyhledávání: '"J.W.W. Schmid"'
Autor:
H.-J. Schulze, Y. Gerstenmaier, P. Voss, H. Kabza, Frank Pfirsch, J.W.W. Schmid, K. Platzoder
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
DC stress tests on high power semiconductor devices at nominal device ratings yielded unexpected device failures. Without prior indication the devices were destroyed spontaneously anywhere in the bulk. The failure rate depends exponentially on the ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::208aeee9a3bdd13e71f08b225a3735e8
https://doi.org/10.1109/ispsd.1994.583620
https://doi.org/10.1109/ispsd.1994.583620
