Zobrazeno 1 - 10
of 161
pro vyhledávání: '"J.W. Metselaar"'
Autor:
Satoshi Inoue, Yasushi Hiroshima, Ryoichi Ishihara, Ming He, Tatsuya Shimoda, C.I.M. Beenakker, D. Danciu, Frans D. Tichelaar, J.W. Metselaar
Publikováno v:
Journal of Crystal Growth. 299:316-321
Microstructure of location-controlled grains by μ-Czochralski process was characterized with electron backscattering diffraction (EBSD) and transmission electron microscopy (TEM). We confirmed that defects in the location-controlled grain are mainly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc2c2ddcea001e9ffcc0c20c51ecfe85
https://doi.org/10.1016/j.jcrysgro.2006.12.010
https://doi.org/10.1016/j.jcrysgro.2006.12.010
Publikováno v:
Thin Solid Films. :252-257
Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R ( R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f8c43b0a74a5fdd6c04923a1fffd51
https://doi.org/10.1016/j.tsf.2005.12.133
https://doi.org/10.1016/j.tsf.2005.12.133
Autor:
J.W. Metselaar, S. Inoue, Yasushi Hiroshima, Vikas Rana, C.I.M. Beenakker, Ryoichi Ishihara, Tatsuya Shimoda, Ming He
Publikováno v:
Thin Solid Films. 487:97-101
Two-dimensional location control of large Si grains by, so-called, μ-Czochralski process with excimer-laser crystallization enables formation of thin-film transistors inside a grain; single-grain Si TFTs. In this study, the effect was studied of rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c107d128a3e962744405e456491ef67f
https://doi.org/10.1016/j.tsf.2005.01.044
https://doi.org/10.1016/j.tsf.2005.01.044
Autor:
C.I.M. Beenakker, Artyom Burtsev, Paul Ch. van der Wilt, J.W. Metselaar, Ryoichi Ishihara, Barry D. van Dijk
Publikováno v:
Thin Solid Films. 427:77-85
This paper reviews advanced excimer-laser crystallization techniques, developed by our group, enabling precise location-control of the individual Si grains. Combined microstructure and time-resolved optical reflectivity investigations during conventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::058b0cc2b2613dfaa2f8bcf72bb44bcf
https://doi.org/10.1016/s0040-6090(02)01250-6
https://doi.org/10.1016/s0040-6090(02)01250-6
Publikováno v:
Solar Energy Materials and Solar Cells. 74:401-406
The main features of a recently developed semi-coherent optical model for a-Si:H thin film solar cells with rough interfaces are presented. In contrast to the previous optical models, the model takes into account also the interference fringes observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d75a287955af1a0b1d17a85cbf10a06
https://doi.org/10.1016/s0927-0248(02)00124-1
https://doi.org/10.1016/s0927-0248(02)00124-1
Autor:
A. Von Keitz, J.W. Metselaar, Frans D. Tichelaar, A.J.M.M. Van Zutphen, Miro Zeman, Pavol Šutta
Publikováno v:
Journal of Crystal Growth. 223:332-340
The structure of polycrystalline silicon films with thickness of 10 μm, which were deposited by thermal chemical vapor deposition on ceramic substrates, was investigated. In this article we report results of silicon films deposited on SiAlON, mullit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc522b3e918cdec3f072ee17cd84665
https://doi.org/10.1016/s0022-0248(01)00618-2
https://doi.org/10.1016/s0022-0248(01)00618-2
Publikováno v:
Scopus-Elsevier
An approach to study the optical behavior of hydrogenated amorphous silicon solar cells with rough interfaces using computer modeling is presented. In this approach the descriptive haze parameters of a light scattering interface are related to the ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1f8cc2675c42905f23e7ca3b99d4400
https://doi.org/10.1063/1.1324690
https://doi.org/10.1063/1.1324690
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95e0ebb22302b67145c7dd0dcdf4d1c2
https://doi.org/10.4028/www.scientific.net/ssp.67-68.161
https://doi.org/10.4028/www.scientific.net/ssp.67-68.161
Publikováno v:
Physica B: Condensed Matter. 252:198-206
In this work we investigated the thermodynamics and kinetics of structural relaxation in a-Si:H films using differential scanning calorimetry (DSC). The relation between structural relaxation and light-induced metastability (Staebler–Wronski effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f2a8ff97f10c1b3306c180376cf6fc
https://doi.org/10.1016/s0921-4526(98)00151-3
https://doi.org/10.1016/s0921-4526(98)00151-3
Publikováno v:
Journal of Non-Crystalline Solids. 226:217-224
In this paper we measure microstructure and optical absorption edge of a-Si:H and silicon-rich a-SiN r :H films prepared at deposition rates ∼0.8 nm/s by radio frequency plasma enhanced chemical vapor deposition method from hydrogen diluted SiH 4 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91413f99e4d1bda3c8cad5cdbd3a0462
https://doi.org/10.1016/s0022-3093(98)00452-9
https://doi.org/10.1016/s0022-3093(98)00452-9