Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J.W. Golz"'
Autor:
B. L. Halpern, J.-Z. Zhang, Haydn N. G. Wadley, L.M. Hsiung, D.C. McIntyre, J.W. Golz, J. J. Schmitt
Publikováno v:
Scripta Metallurgica et Materialia. 29:293-298
Recently, the authors have fabricated aluminum-aluminum oxide (presumably Al[sub 2]O[sub 3]) nanoscale laminates using the novel Jet Vapor Deposition (JVD) process. The JVD process is of interest because it uses high speed (He) gas jets in low vacuum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b47f42cddfbd8ed5ac4e50a73c745af
https://doi.org/10.1016/0956-716x(93)90502-j
https://doi.org/10.1016/0956-716x(93)90502-j
Publikováno v:
Applied Surface Science. :19-26
A novel approach to thin film deposition is presented, which combines supersonic gas jets with fast flow techniques for the “gas jet deposition” (GJD) of metal, semiconductor, oxide, nitride, and organic thin films. The vapor sources are superson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33b0bf5af263f44e8a92012ca05827a
https://doi.org/10.1016/0169-4332(91)90302-z
https://doi.org/10.1016/0169-4332(91)90302-z
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b441d01110bca5298924af18170d0ea
https://doi.org/10.1109/vlsit.1995.520881
https://doi.org/10.1109/vlsit.1995.520881
Publikováno v:
IEEE Electron Device Letters. 13:482-484
The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19058e267eba1b3ddf9a3030e72f2bf2
https://doi.org/10.1109/55.192802
https://doi.org/10.1109/55.192802
Autor:
B. L. Halpern, T. Tamagawa, G.J. Cui, T-p. Ma, X. W. Wang, S.M. Karecki, J. J. Schmitt, J.W. Golz
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c59f09cd30d19411e41345791564b08
https://doi.org/10.7567/ssdm.1994.c-9-2
https://doi.org/10.7567/ssdm.1994.c-9-2
Publikováno v:
MRS Proceedings. 284
Thin films of pyroelectric PZT deposited by Jet Vapor Deposition are considered here for application in IR detector arrays. PZT films of 0.5 μm thickness were deposited on platinum coated insulating substrates and then annealed to increase the perov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a752104dab0f04fdf05e3eb27bb4f30f
https://doi.org/10.1557/proc-284-541
https://doi.org/10.1557/proc-284-541
Publikováno v:
MRS Proceedings. 286
We describe the use of Jet Vapor Deposition for efficient synthesis of nanoscale multilayer films, ceramic-organic films, cluster embedded films, and colloids.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e34e5dc7d7f1d3bac28d9ca5366cad
https://doi.org/10.1557/proc-286-385
https://doi.org/10.1557/proc-286-385
Autor:
X.W. Wang, Simon Karechi, Takashi Tamagawa, Tso–Ping Ma, Guang–Ji Cui, J. J. Schmitt, Bret H. Halpern, J.W. Golz
Publikováno v:
Japanese Journal of Applied Physics. 34:955
This paper reports our results on the properties of gate-quality silicon nitride thin films produced by the jet vapor deposition (JVD) technique at room temperature. It will be shown that the electrical properties and reliability of the metal-nitride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e49257aec8b98e3678d47cdfaf3d15
https://doi.org/10.1143/jjap.34.955
https://doi.org/10.1143/jjap.34.955
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