Zobrazeno 1 - 10
of 41
pro vyhledávání: '"J.W. Gewartowski"'
Autor:
W.E. Schroeder, J.W. Gewartowski
Publikováno v:
MTT-S International Microwave Symposium Digest.
A 2W, 4 GHz GaAsFET amplifier has been developed with performance suitable for replacement of the close-spaced triode transmitter amplifier in the 4 GHz radio relay systems (TD-2 and TD-3D). The amplifier produces a minimum of 21dB of gain using thre
Autor:
J.W. Gewartowski
Publikováno v:
MTT-S International Microwave Symposium Digest.
Output power amplifiers using IMPATT diodes are now being used in FM radio relay transmitters in order to obtain high overall efficiency, the diodes are operated close to maximum rf output power. Since the noise figure increases monotonically with ou
Autor:
J.W. Gewartowski
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:434-442
Progress with CW operation of IMPATT diodes at frequencies up to 20 GHz is reviewed, with emphasis on their circuit applications. Noise properties, stability criteria, and relliability are discussed. Comparisons are made between flat-profile and modi
Autor:
G.R. Basawapatna, C.H. Oxley, K.F. Schunemann, R. Curby, Fwu-Jih Hsu, T.T. Fong, R. Hayashi, M.S. Gupta, M. Ohmori, K. Yamamoto, J.J. Purcell, Y. Tajima, A.M. Howard, G. Pfund, R. Kawasaki, F.N. Sechi, R.L. Camisa, R.A. Kiehl, R.V. Garver, F.E. Gardiol, H. Tohyama, R.S. Tucker, J. Stevance, Chiung-Tung Li, K. Mishima, W.R. Wisseman, G. Cachier, J. Espaignol, R.L. Bernick, Y. Asano, T. Itoh, Y. Aono, G.I. Haddad, A. Azizi, H.J. Kuno, K. Behm, C. Sun, R. Aston, J.W. Gewartowski, J.V. DiLorenzo, C.P. Snapp, H. Abe, G.K. Montress, M.E. Elta, R. Allison, T. Takada, A.K. Talwar, H. Mizuno, H.T. Buscher, J.T.C. Chen, S.R. Mazumder, P.T. Chen, J.W. Tully, R.B. Stancliff, E. Benko, P.H. Wang, K.J. Russell, T.A. Midford
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:546-554
Autor:
J.E. Morris, J.W. Gewartowski
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 18:157-161
This paper describes a method of determining the junction parameters of an IMPATT device from basic microwave measurements through the use of a computer program. The technique, which evaluates the parasitic without the use of substituted impedances,
Autor:
R.D. Brooks, J.W. Gewartowski
Publikováno v:
IEEE Journal of Solid-State Circuits. 3:182-189
A unilateral 1.5- to 6-GHz varactor quadrupler has been developed. The multiplier delivers 2 1/2 watts at 50-percent conversion efficiency and has a maximum input VSWR of 1.6 for all conditions of load impedance. The quadrupler efficiency is diode li
Autor:
J.W. Gewartowski
Publikováno v:
IRE Transactions on Electron Devices. 5:215-222
Results are presented of an experimental study of the spent beam of a backward-wave oscillator. The instantaneous velocity and current of the spent beam are measured using a velocity analyzer built onto the collector of a scaled 80-mc backward-wave o
Autor:
J.W. Gewartowski
Publikováno v:
IRE Transactions on Electron Devices. 9:204-209
A class of slow-wave structures, previously proposed for use in the magnetron amplifier, is examined in the linear version for application in a high-power, traveling-wave amplifier. Two versions are studied, both theoretically and experimentally, wit
Autor:
J.W. Gewartowski
Publikováno v:
Proceedings of the IEEE. 56:1139-1140
Theoretical results are derived for the transmission efficiency in an IMPATT diode oscillator. The transmission efficiency is a measure of the RF losses in the passive diode resistance and the circuit which couples the diode to the load.
Autor:
J.W. Gewartowski, H.N. Carlson
Publikováno v:
Proceedings of the IEEE. 55:443-444
Series-connected silicon varactors are used in a frequency tripler to obtain over 12 W at 1.5 GHz with a conversion efficiency of 75 percent.