Zobrazeno 1 - 10
of 227
pro vyhledávání: '"J.T.M. Stevenson"'
Autor:
Giuseppe Schiavone, N. L. Brockie, Stewart Smith, Christopher J. Wilson, J. Murray, Andrew R. Mount, J.T.M. Stevenson, Anthony J. Walton, Jonathan G. Terry, Alton B. Horsfall
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 25:346-354
SU-8 is an epoxy-based, negative photoresist that is widely used in the manufacturing of micromechanical systems. The polymer cross-linking that occurs during the photolithographic processing of SU-8 can result in high levels of stress in the pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf1971da070fd803dffef142ad8e611
https://doi.org/10.1109/tsm.2012.2202797
https://doi.org/10.1109/tsm.2012.2202797
Autor:
Wayne S. Holland, Camelia Dunare, W. Parkes, M. J. MacIntosh, Robert Henderson, Yifan Li, Jonathan G. Terry, David Flynn, David Renshaw, J.T.M. Stevenson, K.R. Muir, Marc P.Y. Desmulliez, Bruce Rae, Ian Underwood, Anthony J. Walton, Andrew Bunting, Tong Boon Tang, Stewart Smith, H. Lin, Alan F. Murray
Publikováno v:
University of St Andrews CRIS
Heriot-Watt University
Heriot-Watt University
Silicon based integrated circuit technology has shown astonishing progress scaling to smaller geometries as the industry follows Moore's predictions. However, in recent years the cost associated with staying at the leading edge of silicon IC technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b18068cb64aa327769ef35249e300d8d
https://doi.org/10.23919/saiee.2010.8532213
https://doi.org/10.23919/saiee.2010.8532213
Autor:
Stewart Smith, Ronald G. Dixson, James E. Potzick, Anthony J. Walton, Michael W. Cresswell, J.T.M. Stevenson, R.A. Allen, M. McCallum, Andreas Tsiamis, A.C. Hourd, Ndubuisi G. Orji
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 22:72-79
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the abov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734af052218c330836e5384880aba7fd
https://doi.org/10.1109/tsm.2008.2010733
https://doi.org/10.1109/tsm.2008.2010733
Publikováno v:
Journal of Microelectromechanical Systems. 17:1481-1488
This paper presents a robust anodic Ta2O5 dielectric as an alternative insulator for fabricating low-voltage electrowetting on dielectric (EWOD) systems. Previously reported low-voltage EWOD technologies require high-temperature processes ( > 435degC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328102baab6dc3431bb15aa79dcf6737
https://doi.org/10.1109/jmems.2008.2006827
https://doi.org/10.1109/jmems.2008.2006827
Autor:
A.J. Snell, Andrew Bunting, A.W.S. Ross, Stewart Smith, A.M. Gundlach, M.W. Cresswell, A.J. Walton, R.A. Allen, B.J.R. Shulver, L.I. Haworth, J.T.M. Stevenson
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:495-503
Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f0e5c19c676d7b2b9a7c32ec37a22d
https://doi.org/10.1109/tsm.2008.2004312
https://doi.org/10.1109/tsm.2008.2004312
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:154-160
This paper presents a comparison of optical and electrical techniques for critical dimension (CD) metrology on binary and alternating aperture phase-shifting masks. Measurements obtained from on-mask electrical CD structures are compared with optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0752ca7cacc1a7f924092ef9987fb4d9
https://doi.org/10.1109/tsm.2008.2000276
https://doi.org/10.1109/tsm.2008.2000276
Autor:
Andrew Bunting, H. Lin, Anthony J. Walton, Stewart Smith, Alan M. Gundlach, J.T.M. Stevenson, Camelia Dunare
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:140-147
Test structures have been used to study the feasibility of bonding MEMS to CMOS wafers to create an integrated system. This involves bonding of prefabricated wafers and creating interconnects between the bonded wafers. Bonding of prefabricated wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08f3ababc67908e4c33d6eb9c7094ae
https://doi.org/10.1109/tsm.2008.2000274
https://doi.org/10.1109/tsm.2008.2000274
Autor:
William Parkes, James S. Barton, C C Dunare, V Djakov, William N. MacPherson, J.T.M. Stevenson, Stuart Watson
Publikováno v:
Journal of Micromechanics and Microengineering. 17:1334-1342
Optical fibre pressure sensors have potential performance advantages over electrical sensors in measuring rapid transients such as shock waves from explosive blasts. We report the development of micromachined optical fibre Fabry–Perot pressure sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c21db900bd24f2bc8e5b2a3ccf781f
https://doi.org/10.1088/0960-1317/17/7/016
https://doi.org/10.1088/0960-1317/17/7/016
Autor:
Steve Bull, Nicholas G. Wright, Alton B. Horsfall, Anthony J. Walton, Christopher J. Wilson, J.T.M. Stevenson, Anthony O'Neill, Jonathan G. Terry
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:356-362
This paper reports the first direct experimental measurement of electromigration-induced stress in aluminum interconnects, using a series of microrotating stress sensors. The build-up of stress gradients in interconnect metallization, which is concom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9471ff69e7d7da5f1435eb55b051e93
https://doi.org/10.1109/tdmr.2007.901071
https://doi.org/10.1109/tdmr.2007.901071
Autor:
Anthony J. Walton, Stewart Smith, M.H. Dicks, J.T.M. Stevenson, C.L. Brown, Michael N. Kozicki, S. Enderling, Maria Mitkova
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 19:2-9
This paper presents work on the development, fabrication and characterization of a suspended Greek cross measurement platform that can be used to determine the sheet resistance of materials that would contaminate Complementary Metal Oxide Semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c309d5ed1e54e3e87d58fb44e7e8e4
https://doi.org/10.1109/tsm.2005.863248
https://doi.org/10.1109/tsm.2005.863248