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pro vyhledávání: '"J.T. Mullins"'
Akademický článek
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Publikováno v:
Journal of crystal growth, 2016, Vol.448, pp.44-50 [Peer Reviewed Journal]
The onset of twinning from View the MathML source to View the MathML source in large volume Cd1−xZnx Te crystals, grown by vapour transport on View the MathML source, often referred to as (211)B, oriented GaAs seeds, has been investigated using X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ec292316f512d3f419195d1d9e3e3be
https://doi.org/10.1016/j.jcrysgro.2016.05.011
https://doi.org/10.1016/j.jcrysgro.2016.05.011
Publikováno v:
Journal of Crystal Growth. 413:61-66
X-ray diffraction imaging (topography) has been used in monochromatic beam mode to demonstrate that 100 mm diameter ZnTe crystals, several millimetres thick, and grown by the multi-tube physical vapour transport technique on (001) and (211B) GaAs sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::233c956b7bf26755fac07e64324a274b
https://doi.org/10.1016/j.jcrysgro.2014.12.007
https://doi.org/10.1016/j.jcrysgro.2014.12.007
Akademický článek
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Autor:
B.J. Cantwell, A. Choubey, Arnab Basu, J.T. Mullins, Brian K. Tanner, A.W. Brinkman, Q. Jiang
Publikováno v:
Journal of Electronic Materials. 37:1460-1464
The growth of large-area bulk crystals of cadmium telluride and cadmium zinc telluride has been demonstrated using the combination of a novel physical vapor transport growth system and heteroepitaxial seeding on GaAs wafers. X-ray diffraction studies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4744dfcb21c1fac52d8a9feac656620c
https://doi.org/10.1007/s11664-008-0442-3
https://doi.org/10.1007/s11664-008-0442-3
Publikováno v:
Journal of Crystal Growth. 310:1664-1668
This paper reports on the growth using a modified close space sublimation of good epitaxial CdTe layers on GaAs substrates and a multi-grain CdTe seedplate. Decreasing the substrate–source distance to a few millimetres improves the substrate–vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d53d7c9ad6477516d85ec6e88daeef
https://doi.org/10.1016/j.jcrysgro.2007.12.043
https://doi.org/10.1016/j.jcrysgro.2007.12.043
Publikováno v:
Journal of Crystal Growth. 310:2058-2061
We report here on some of the characteristics of CdTe bulk crystals grown on commercially available (2 1 1)B GaAs wafers by multitube physical vapour transport, a process analogous to vapour phase heteroepitaxy. Crystals several millimetres in thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7309a3662fde8b9cecaf7c5cad1ab3ec
https://doi.org/10.1016/j.jcrysgro.2007.11.190
https://doi.org/10.1016/j.jcrysgro.2007.11.190
Autor:
Q. Jiang, J. Toman, Arnab Basu, J.T. Mullins, Thomas P. A. Hase, A.W. Brinkman, B.J. Cantwell, Geoffrey E. Lloyd
Publikováno v:
Journal of Crystal Growth. 310:1652-1656
This paper reports on the growth using a modified physical vapour transport technique of good epitaxial CdTe layers on GaAs(1 0 0), (1 1 1)A and (2 1 1)B substrates. FWHM values as low as 250 arcsec with growth rates of 10–20 μm/h were recorded fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984e85fd665ff04725690fe1f78aa2ac
https://doi.org/10.1016/j.jcrysgro.2007.11.171
https://doi.org/10.1016/j.jcrysgro.2007.11.171
Publikováno v:
Journal of Crystal Growth. 220:30-38
Low-temperature photoluminescence has been used to profile the distribution of impurities and defects through a CdTe boule grown at 700°C by the new “multi-tube” vapour-growth technique. The PL spectrum is dominated by an acceptor bound exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f6ac33f8caace75a4c255f2d152a56
https://doi.org/10.1016/s0022-0248(00)00755-7
https://doi.org/10.1016/s0022-0248(00)00755-7
Publikováno v:
Journal of Crystal Growth. 208:211-218
A novel crystal growth apparatus which separates the source and growth regions of a vapour transport system into separate vertical furnaces connected by a horizontal transport passage has been developed. The transport passage incorporates a flow rest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ca20a7356cf8fdfad5fa289f4d87ab
https://doi.org/10.1016/s0022-0248(99)00394-2
https://doi.org/10.1016/s0022-0248(99)00394-2