Zobrazeno 1 - 10
of 156
pro vyhledávání: '"J.S. Ahearn"'
Autor:
Emmanuelle Laprise, J. Faucher, J.S. Ahearn, Michael B. Venditti, Kevan Razavi, Marc Chateauneuf, David V. Plant, Andrew G. Kirk
Publikováno v:
Journal of Lightwave Technology. 19:1093-1103
Two-dimensional parallel optical interconnects (2-D-POIs) are capable of providing large connectivity between elements in computing and switching systems. Using this technology we have demonstrated a bidirectional optical interconnect between two pri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5147e5149301d291cb180cca9981f192
https://doi.org/10.1109/50.939788
https://doi.org/10.1109/50.939788
Autor:
J.S. Ahearn, M. Nathan
Publikováno v:
Materials Science and Engineering: A. 126:225-230
Four materials—Al2O3, TiBx, VBx, and TaBx (x < 2)-with thicknesses from 50 to 200 A were evaluated as interfacial reaction barriers between titanium and SiC in a thin film model system. Two of these materials—Al2O3 and TiBx-show effectiveness in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bddf331c5f9d69c6c4ed376b7d96e17
https://doi.org/10.1016/0921-5093(90)90127-o
https://doi.org/10.1016/0921-5093(90)90127-o
Autor:
M. Sundaram, J.S. Ahearn
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
We summarize the current state of quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. One-color longwave (LW) and midwave (MW) infrared FPAs in formats up to 640/spl times/480 are being produced by several groups. We recent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f8d7d6a9b5268fbc0da74f8aa189e5
https://doi.org/10.1109/gaas.1999.803733
https://doi.org/10.1109/gaas.1999.803733
Publikováno v:
LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).
Summary form only given. BAE Systems is developing integrated sensors for future commercial applications. This paper will present the detailed design of an electro-optical sensor, that incorporates an integrated UV focal plane using AlGaN 256/spl tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecb50f078acf28db17cd25324a047a7
https://doi.org/10.1109/leos.2001.969068
https://doi.org/10.1109/leos.2001.969068
Publikováno v:
NDT & E International. 25:102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afd40cae27085826dbd58b588e3e2832
https://doi.org/10.1016/0963-8695(92)90581-z
https://doi.org/10.1016/0963-8695(92)90581-z
Publikováno v:
Applications of Surface Science. 5:406-425
This paper discusses the effects of microtopographical structures on the Auger electron spectroscopic (AES) depth profiles of porous Al anodic oxides. In addition to a shadowing effect, the microtopographical structures in the oxide are responsible f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa18f545688eef0aecf54bbce478063e
https://doi.org/10.1016/0378-5963(80)90105-1
https://doi.org/10.1016/0378-5963(80)90105-1
Publikováno v:
Journal of Crystal Growth. 95:281-287
We investigated the quality of GaAs, Al x Ga 1− x As and In x Ga 1− x As layers grown by molecular beam epitaxy (MBE) on GaAs (100), (211), and (221). Significant differences in the quality of the layers were observed. The quality of layers of la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e1c04e15530eb19a2a1f44c324ec92
https://doi.org/10.1016/0022-0248(89)90402-8
https://doi.org/10.1016/0022-0248(89)90402-8
Publikováno v:
Scripta Metallurgica. 8:387-391
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d990625b536a32df47bbbb5d71556585
https://doi.org/10.1016/0036-9748(74)90144-6
https://doi.org/10.1016/0036-9748(74)90144-6
Publikováno v:
MRS Proceedings. 116
Material properties of GaAs films grown on Si(321) substrates using molecular beam epitaxy (MBE) were evaluated and compared to films grown on Si(100) and Si(211). Dislocation densities in the GaAs(321) films, determined using transmission electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08904baf645e85e9c60df15adb679a0d
https://doi.org/10.1557/proc-116-129
https://doi.org/10.1557/proc-116-129
Publikováno v:
MRS Proceedings. 145
The density and arrangement of dislocations in In0.15Ga0.85As grown on GaAs(100)) were determined by transmission electron microscopy as a function of misorientation toward (111)A, (111)B, and (110). Strained layer superlattices were used in all case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b4ffd8846b7a3c3f3000c4d0884262
https://doi.org/10.1557/proc-145-385
https://doi.org/10.1557/proc-145-385