Zobrazeno 1 - 10
of 43
pro vyhledávání: '"J.R. Szedon"'
Autor:
Anant K. Agarwal, Maurice H. Hanes, M.C. Driver, Terence W O'keeffe, J.R. Szedon, R.R. Siergiej, H.M. Hobgood, T.J. Smith, Harvey C. Nathanson, C.D. Brandt, R.N. Thomas
Publikováno v:
IEEE International SOI Conference.
Publikováno v:
MTT-S International Microwave Symposium Digest.
RF magnetron-sputtered piezoelectric films on silicon semiconductor substrates provide the basis for high Q, temperature-stable, bulk acoustic resonators in monolithic, UHF signal processing circuits. This paper describes the design of UHF oscillator
Autor:
H.M. Hobgood, Maurice H. Hanes, P.G. McMullin, A.K. Agarwal, J.R. Szedon, R.N. Thomas, Harvey C. Nathanson, Terence W O'keeffe, M.C. Driver, T.J. Smith
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids curren
Autor:
Maurice H. Hanes, R.R. Siergiej, J.R. Szedon, Harvey C. Nathanson, Terence W O'keeffe, T.J. Smith, M.C. Driver, R.N. Thomas, P.G. McMullin, H.M. Hobgood, Anant K. Agarwal
Publikováno v:
IEEE Electron Device Letters. 14:219-221
An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent elec
Publikováno v:
Thin Solid Films. 125:291-298
Aluminum nitride (AlN) is becoming one of the more promising thin film piezoelectric materials because of its high ultrasonic velocity, low acoustic loss and fairly large piezoelectric coupling factor. Previous studies have shown that, using d.c. mag
Autor:
A.G. Jordan, J.R. Szedon
Publikováno v:
Solid-State Electronics. 6:631-643
Since the proposal of the avalanche injection diode, AID , by Gunn, it has become necessary to incorporate fundamental knowledge regarding collision multiplications and other high field, high current density effects into models that approximate actua
Autor:
W.J. Takei, J.R. Szedon
Publikováno v:
Proceedings of the IEEE. 59:1434-1439
In microelectronic applications, various approaches have been used to provide high capacitance thin film components. None of these has been widely accepted for reasons that are both technical and economic. Limited applications have been made of silic
Publikováno v:
Solid-State Electronics. 10:897-905
Amorphous silicon nitride films have been deposited on silicon substrates, with main faces of {111} and {100} orientations, at 800–1100°C using the nitridation of silane with ammonia. In many cases, the substrate surfaces were etched in situ with
Publikováno v:
IEEE 1984 Ultrasonics Symposium.