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pro vyhledávání: '"J.R. Radosevich"'
Autor:
A. Mihnea, Robert D. Norman, R.A. Kohler, Gheorghe Samachisa, K.R. Stiles, E.P. Eberhardt, Chung Wai Leung, Mehrdad Mofidi, Raul Adrian Cernea, Winston Lee, Daniel C. Guterman, Jack H. Yuan, T.J. Mulrooney, J.R. Radosevich, Yupin Kawing Fong, W.Y. Chien, Eliyahou Harari, R.W. Gregor, Sanjay Mehrotra
Publikováno v:
1992 Symposium on VLSI Circuits Digest of Technical Papers.
A 9-Mb flash EEPROM incorporating a serial interface and other features specifically suited for low-cost, high-capacity, low-power solid-state storage systems has been fabricated using a triple polysilicon, single-metal, 0.9- mu m CMOS process. Thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::791905a7d6ac2f97e41dfe9b96ebe4b4
https://doi.org/10.1109/vlsic.1992.229254
https://doi.org/10.1109/vlsic.1992.229254
