Zobrazeno 1 - 10
of 83
pro vyhledávání: '"J.R. Ayres"'
Autor:
Luigi Mariucci, J.R. Ayres, A. Bonfiglietti, Guglielmo Fortunato, Antonio Valletta, Alessandro Pecora, Massimo Cuscunà, S.D. Brotherton
Publikováno v:
IEEE Transactions on Electron Devices. 50:2425-2433
Different drain field architectures have been recently investigated to reduce field-enhanced effects in conventional self-aligned polysilicon thin-film transistor (TFT) architecture, induced by the intense electric fields at the drain junction. Among
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1377341dd28f8e3e98c88d0a8d18e5b1
https://doi.org/10.1109/ted.2003.819250
https://doi.org/10.1109/ted.2003.819250
Publikováno v:
IEEE Electron Device Letters. 18:315-318
A model based on two-dimensional (2-D) simulation, for a polysilicon thin-film transistor (poly-Si TFT) with large grains, fabricated in laser recrystallized material, is presented. The importance of differentiating between the density of states of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8b097e8ce9bc26f65c5952ac998eca
https://doi.org/10.1109/55.596923
https://doi.org/10.1109/55.596923
Publikováno v:
Solid-State Electronics. 41:835-844
Numerical simulation was used to model transient carrier emission from deep level traps in polycrystalline silicon (poly-Si) thin film transistors and to validate the analytical approximations used to interpret DLTS measurements. Transient emission f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ddcb1db79288748a87f0d242ee1c261
https://doi.org/10.1016/s0038-1101(97)00053-1
https://doi.org/10.1016/s0038-1101(97)00053-1
Publikováno v:
Solid-State Electronics. 39:1337-1346
Polysilicon thin film transistors (TFTs) differ from conventional silicon on insulator (SOI) transistors in that the TFT exhibits a fundamental gate length dependence of the voltage at which a kink occurs in the output characteristics. This differenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0438736aa06097e80f257c94a3a53a40
https://doi.org/10.1016/0038-1101(96)00030-5
https://doi.org/10.1016/0038-1101(96)00030-5
Autor:
Nigel D. Young, J.R. Ayres
Publikováno v:
IEEE Transactions on Electron Devices. 42:1623-1627
Degradation of the device characteristics of poly-Si TFT's are seen following negative gate bias stress at elevated temperatures. The degradation has two components, One component is the trapping of holes in the gate oxide; this is a similar phenomen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe723afc08ede58570dd0a869630c63
https://doi.org/10.1109/16.405276
https://doi.org/10.1109/16.405276
Publikováno v:
Solid-State Electronics. 34:671-679
There is developing interest in using thin film transistors as active elements in a range of large area electronics applications. The characteristics of poly-Si thin film transistors (TFTs), processed at glass compatible temperatures, have been inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd50e1c13246a55083c1839db0a4ffe
https://doi.org/10.1016/0038-1101(91)90002-g
https://doi.org/10.1016/0038-1101(91)90002-g
Autor:
J.R. Ayres
Publikováno v:
Proceedings of European Meeting on Lasers and Electro-Optics CLEOE-96.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e278f68b2cd304ba8ea4755eb759b16
https://doi.org/10.1109/cleoe.1996.562423
https://doi.org/10.1109/cleoe.1996.562423
Autor:
J.R. Ayres
Publikováno v:
IEE Colloquium on `Novel Display Technologies'.
Summary form only given, as follows. At the present time the majority of active matrix liquid crystal displays are fabricated with a-Si:H bred thin film transistors (TFTs) or diodes (TFDs) as the pixel switching element. Poly-Si TFT technologies offe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1858973a1a331678f399a6cf70ed97
https://doi.org/10.1049/ic:19950861
https://doi.org/10.1049/ic:19950861
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