Zobrazeno 1 - 10
of 46
pro vyhledávání: '"J.P.A. van der Wagt"'
Publikováno v:
IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 51:186-190
A proposed mirrored shuffle layout pattern cancels systematic resistor gradient variations up to second order and allows monolithic integration of hundreds of matched resistors for precision analog circuits. A test circuit uses 15 000 subresistors an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26795914db511c5fe357a8e57374e5f5
https://doi.org/10.1109/tcsi.2003.821303
https://doi.org/10.1109/tcsi.2003.821303
Autor:
J.P.A. van der Wagt
Publikováno v:
Proceedings of the IEEE. 87:571-595
This paper describes a new high-density low-power circuit approach for implementing static random access memory (SRAM) using low current density resonant tunneling diodes (RTDs). After an overview of semiconductor random access memory architecture an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2660f1c5594b3329dd96f978cd8b34f8
https://doi.org/10.1109/5.752516
https://doi.org/10.1109/5.752516
Publikováno v:
IEEE Transactions on Electron Devices. 46:55-62
We propose and demonstrate a resonant-tunneling diode (RTD) based memory cell in which N bits are stored in a series combination of N RTDs without internal node contacts. The slew rate of an applied voltage signal determines the circuit switching dyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cbb554113d731ad74eab4a41e4b530
https://doi.org/10.1109/16.737441
https://doi.org/10.1109/16.737441
Autor:
Bobby Brar, Alan Seabaugh, Theodore S. Moise, E.A. Beam, Francis J. Morris, Gary A. Frazier, T.P.E. Broekaert, J.P.A. van der Wagt
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1342-1349
The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d29b053006ea765a99e271cac73b2ee
https://doi.org/10.1109/4.711333
https://doi.org/10.1109/4.711333
Autor:
J.P.A. van der Wagt, James S. Harris
Publikováno v:
Journal of Crystal Growth. 127:1025-1029
We develop a quantitative model for computation of the RHEED signal intensity during epitaxial growth. The growth surface is described in a way that naturally allows for tilted substrates. Oscillations in the computed RHEED signal during MBE growth e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac521ea75ced7036c5537fd682ba033
https://doi.org/10.1016/0022-0248(93)90782-r
https://doi.org/10.1016/0022-0248(93)90782-r
Publikováno v:
Applied Physics Letters. 75:280-282
We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×1014 H+/cm2. Proton fluences below about 1×1013 cm−2 have little effect on the resonant tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc5abaee767796cf5246c7d61ef440f
https://doi.org/10.1063/1.124348
https://doi.org/10.1063/1.124348
Publikováno v:
IEEE Electron Device Letters. 19:7-9
A 50-nW standby power compound semiconductor tunneling-based static random access memory SRAM (TSRAM) cell is demonstrated by combining ultralow current-density resonant-tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900fc26b33b82e1739cee54a04faf81b
https://doi.org/10.1109/55.650335
https://doi.org/10.1109/55.650335
Autor:
S.K. Sun, R. Nguyen, R. Yu, J.P.A. van der Wagt, J.B. Sobti, Vincent Vella, M.J. Choe, S. Beccue, C.T. Chang, D.J. Albares, R.B. Olsen, E.W. Jacobs
Publikováno v:
2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859).
An optically clocked track-and-hold (TH) circuit for improved TH linearity and noise performance is presented. Results with f/sub in/=1.0073 GHz and sample rate f/sub s/=1.003 GS/s show 11.8 SFDR bits and 9.6 SNR bits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720c0597bed0df766312d337ce3c77f6
https://doi.org/10.1109/mwp.2004.1396871
https://doi.org/10.1109/mwp.2004.1396871
Autor:
James S. Harris, R. J. Higgins, M Maldonado, R. E. Carnahan, Kevin P. Martin, J.P.A. van der Wagt
Publikováno v:
Applied Physics Letters. 64:2403-2405
A 13 layer aperiodic semiconductor superlattice electron wave interference filter, designed with thin‐film optical interference filter techniques by using the analogies between electromagnetic wave propagation in dielectrics and ballistic electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f30e5cbebbaf44c0b96dc4843d808ce
https://doi.org/10.1063/1.111604
https://doi.org/10.1063/1.111604
Autor:
J.P.A. van der Wagt, M. Teshome
Publikováno v:
2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185).
A track-and-hold is a critical sub-circuit of a wideband pipelined ADC. A 1-GS/s fully differential dual track-and-hold circuit fabricated in an 80-GHz f/sub T//fax, GaAs HBT production process exhibits an input bandwidth of 8.4 GHz (0.5 V/sub pp/) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::145b8d431a87d7c1d78747092fc7ab4e
https://doi.org/10.1109/vlsic.2001.934243
https://doi.org/10.1109/vlsic.2001.934243