Zobrazeno 1 - 10
of 99
pro vyhledávání: '"J.P. Vieren"'
Autor:
André Perrin, Maryline Guilloux-Viry, S.H. Moffat, N. Bontemps, Yves Guldner, J.P. Vieren, S. Djordjevic, John S. Preston, Xavier Castel, L. A. de Vaulchier
Publikováno v:
The European Physical Journal B. 5:847-858
Measurement of the penetration depth λ(T) as a function of temperature using millimeter wave transmission in the range 130-500GHz are reported for three YBa2 (YBCO) laser ablated thin films. Two films, deposited on a LaAlO3 substrate (Tc=90.2 K), ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c6991652d537e6df5c39df5783bc51
https://doi.org/10.1007/s100510050511
https://doi.org/10.1007/s100510050511
Autor:
Yves Guldner, Y. Campidelli, S. Zanier, J.P. Vieren, Isabelle Sagnes, P. A. Badoz, Jean-Marc Berroir
Publikováno v:
Applied Surface Science. 102:331-335
Infrared absorption has been investigated in high quality p-type SiGe/Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analysed using calculations of the intersubband absorption coeff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2775d49a68b3e32443c3be9e4a5301d
https://doi.org/10.1016/0169-4332(96)00074-8
https://doi.org/10.1016/0169-4332(96)00074-8
Autor:
L.A. de Vaulchier, Roland Combescot, N. Bontemps, Y. Lemaitre, J. C. Mage, J.P. Vieren, Yves Guldner
Publikováno v:
Europhysics Letters (EPL). 33:153-158
We have measured the penetration depth $\lambda(T)$ on $\rm YBa_{2}Cu_{3}O_{7}$ thin films from transmission at 120, 330 and 510~GHz, between 5 and 50~K. Our data yield simultaneously the absolute value and the temperature dependence of $\lambda(T)$.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fd25f6d5a002241e1146c00137585e
https://doi.org/10.1209/epl/i1996-00314-9
https://doi.org/10.1209/epl/i1996-00314-9
Autor:
Jean-Marc Berroir, Y. Campidelli, P. A. Badoz, S. Zanier, J.P. Vieren, Isabelle Sagnes, Yves Guldner
Publikováno v:
Solid-State Electronics. 40:123-126
Infrared absorption has been investigated in high quality p-type SiGeSi multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analyzed using a modified Drude model, and their relative contrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de72bbc7811635219858f7c26d646b29
https://doi.org/10.1016/0038-1101(95)00230-8
https://doi.org/10.1016/0038-1101(95)00230-8
Autor:
L. A. de Vaulchier, Yves Guldner, N. Bontemps, J.P. Vieren, C. Le Paven-Thivet, A. El Azrak, Maryline Guilloux-Viry, André Perrin
Publikováno v:
Physical Review B. 52:564-569
We compare the analytical expressions for the transmission and the surface resistance of a thin superconducting film and we point out the differences and similarities between the two quantities. We show that in the case of the transmission, this sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e5f1b92f68f51ff1811c042f9a6ba3
https://doi.org/10.1103/physrevb.52.564
https://doi.org/10.1103/physrevb.52.564
Autor:
P. Warren, P. A. Badoz, J.P. Vieren, Isabelle Sagnes, Yves Guldner, D. Dutartre, Jean-Marc Berroir, M. Voos
Publikováno v:
Microelectronic Engineering. 25:171-176
High-quality Si/Si 1-x Ge x simple (both normal and inverted) and double modulation doped heterostructures with 0 1-x Ge x layer. The dependence of the confined density and hole mobility on germanium concentration and Si spacer thickness is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba09220fb326fa21dabaf752dd9f2ce
https://doi.org/10.1016/0167-9317(94)90013-2
https://doi.org/10.1016/0167-9317(94)90013-2
Autor:
P. A. Badoz, P. Warren, Didier Dutartre, Isabelle Sagnes, M. Voos, Jean-Marc Berroir, J.P. Vieren, Yves Guldner
Publikováno v:
Solid-State Electronics. 37:953-956
Shubnikov-de Haas and quantum Hall effect measurements in p-type modulation doped Si-SiGe-Si double heterostructures with both symmetric and asymmetric doping grown by rapid thermal chemical vapor deposition, show that the two interfaces are highly e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0140e5ef5970a457393cc9a7648eb0
https://doi.org/10.1016/0038-1101(94)90334-4
https://doi.org/10.1016/0038-1101(94)90334-4
Publikováno v:
Surface Science. 263:541-546
We present transport and far-infrared magneto-optical measurements in n-type HgZnTeCdTe superlattices over a large temperature range (1.5–300 K). The data show unambiguously that these superlattices are semimetallic at low temperature and are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4db01e8a805270cf40389947ab913f
https://doi.org/10.1016/0039-6028(92)90404-t
https://doi.org/10.1016/0039-6028(92)90404-t
Autor:
Yves Guldner, Y. Galvão Gobato, J.P. Vieren, J. Nagle, François Chevoir, Jean-Marc Berroir, P. Bois, Borge Vinter
Publikováno v:
Physical Review B. 43:4843-4848
Les magneto-oscillations du courant dans la situation de resonance montrent la bidimensionnalite des electrons de la source resultant de la formation d'une couche d'accumulation dans l'emetteur. On observe trois ensembles differents des oscillations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84808d8332d8ad1b408e5daeb585bd7c
https://doi.org/10.1103/physrevb.43.4843
https://doi.org/10.1103/physrevb.43.4843
Publikováno v:
Superlattices and Microstructures. 10:311-314
From far infrared magneto-optical absorption experiments done in n-type Hg1−xZnxTeCdTe superlattices, the conduction band dispersion relations are obtained. Comparison with theoretical investigations evidences the semimetallic behavior of the st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c45691210459d5db7a9d2cb4102d0ff7
https://doi.org/10.1016/0749-6036(91)90333-m
https://doi.org/10.1016/0749-6036(91)90333-m