Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J.P. Viaud"'
Publikováno v:
2021 51st European Microwave Conference (EuMC).
Autor:
A.M. Couturier, Marc Camiade, P. Chaumas, S. Heckmann, J.J. Fontecave, Stéphane Piotrowicz, T. Huet, J.P. Viaud, V. Serru
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A monolithic two stages high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS HBT process called HB20P (GalnP/GaAs) in term of breakdown, the consideration of mi
Publikováno v:
IEEE Microwave and Guided Wave Letters. 4:104-106
The nonlinear FET I(V) behavior, including gate conduction and breakdown, has been investigated using a pulse measurement setup. An excessive current source has been observed in addition to the usual gate breakdown current. From these measurements, a
Publikováno v:
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits.
A new method for the characterization of microwave measurements has been developed. This method is based upon I(V) and S-parameters measured under pulsed condition thus avoiding the trapping and the thermal effects. The ability of the test-set-up to
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
In this paper we report the results of the first demonstration of a 0.5 Watt, 2 to 8 GHz MMIC HBT distributed power amplifier optimised with a new design methodology. Initially developed for MESFET transistors, this new design methodology has been ap
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are per
Publikováno v:
IEEE MTT-S, International Symposium on Microwave Theory and Techniques
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2000, Boston, United States. pp. 529-532, ⟨10.1109/MWSYM.2000.861108⟩
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2000, Boston, United States. pp. 529-532, ⟨10.1109/MWSYM.2000.861108⟩
In this paper a new topology for wideband power distributed amplifiers is proposed. This topology is based on a nonlinearly optimized HBT cascode cell. More than 2 W have been measured in the 2-8 GHz frequency range with an associated gain of 9 dB an
Autor:
O. Schickl, Marc Camiade, J.P. Viaud, B. Adelseck, Pierre Quentin, J. Schroth, M. Lajugie, M. Turin, Heinrich Daembkes, Klaus Beilenhoff, P. Chapelle
Publikováno v:
30th European Microwave Conference, 2000.
In this paper the impact of advanced GaAs MMIC design and fabrication on the cost structure of today's RF modules for the commercial mass market will be discussed. The emerging new generation of multifunction MMICs will lead to a higher integration s
Publikováno v:
Alleaume, P.F. ; Auxemery, Ph. ; Viaud, J.P. ; Blanck, H. ; Lajugie, M. (2000) HBT technology for high power X band and broadband amplification. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
For many applications like active phased array antennas for airborne radar, high power levels are required. To provide high performance and high manufacturing yield at a reduced coast, a MMIC solution is naturally very attractive. This can be achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0aa788f5940540ebc9d78d5221567a3
http://amsacta.unibo.it/309/
http://amsacta.unibo.it/309/
Publikováno v:
24th European Microwave Conference, 1994.
I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has