Zobrazeno 1 - 10
of 66
pro vyhledávání: '"J.P. Starski"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:871-877
0.5-13- and 24-40-GHz broadband cryogenic monolithic-microwave integrated-circuit low-noise amplifiers (LNAs) have been designed and fabricated using a 130-nm InP HEMT process. Packaged LNAs have been measured at both 300 and 15 K. At 300 K, the meas
Autor:
J. Halonen, Joel Schleeh, Arsalan Pourkabirian, Eunjung Cha, G. Alestig, Jan Grahn, J.P. Starski, Bengt Nilsson, Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4–15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power wa
Autor:
Jan Grahn, G. Alestig, Arsalan Pourkabirian, J. Halonen, Herbert Zirath, J.P. Starski, Joel Schleeh, Bengt Nilsson, Per-Åke Nilsson, Niklas Wadefalk
Publikováno v:
2015 Asia-Pacific Microwave Conference (APMC).
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4" wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:3417-3425
Parylene-C is a polymeric material primarily used in hybrid manufacturing for humidity protection and dielectric isolation. In this study, the influence of Parylene-C on passive millimeter-wave circuits such as transmission lines and resonators is in
Autor:
Joel Schleeh, Per-Åke Nilsson, Jan Grahn, Anna Malmros, J.P. Starski, Herbert Zirath, G. Alestig, J. Halonen, Bengt Nilsson, Niklas Wadefalk
Publikováno v:
IEEE Electron Device Letters. 33:664-666
We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-leng
Publikováno v:
IEEE Transactions on Advanced Packaging. 25:503-508
Liquid crystal polymer (LCP) is a promising substrate for electronics packaging. In this paper, the high frequency characteristics of LCP were investigated using a microstrip ring resonator to verify the possibility of applying the material in RF pac
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:2069-2075
This paper presents the design and realization of a double four-port Butler matrix to feed a four-column array antenna with two orthogonally polarized signals (to obtain polarization diversity). The main goals of this study are the reduction of the s
Autor:
Herbert Zirath, Joel Schleeh, J. Halonen, J.P. Starski, Jan Grahn, G. Alestig, Niklas Wadefalk, Per-Åke Nilsson, Bengt Nilsson, Helena Rodilla
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage unit
Autor:
Herbert Zirath, Wei-Cheng Wu, Camilla Kärnfelt, Li-Han Hsu, J.P. Starski, Yun-Chi Wu, Edward Yi Chang
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:784-786
In this letter, the microstrip-to-coplanar waveguide (MS-to-CPW) hot-via flip chip interconnect has been experimentally demonstrated to have broadband performance from dc to 67 GHz. The interconnect structures with the hot-via transitions were first
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 21:478-491
This paper gives results from HF measurements and simulation of sequential build-up boards (SBU). An HF test pattern was designed to investigate SBU HF properties. SBUs were supplied by four manufacturers. The test SBUs contained patterns for crossta