Zobrazeno 1 - 10
of 43
pro vyhledávání: '"J.P. Praseuth"'
Autor:
J.P. Praseuth
Publikováno v:
Microelectronics Journal. 26:841-852
In this paper, we present the potentiality of the AlGaInAs quaternary alloy system grown by molecular beam epitaxy on non-planar InP substrates. Cross-sectional scanning electron microscopy pictures were used to study the growth behaviour of such a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a626ea04cbceccf8f41f1897e15a8798
https://doi.org/10.1016/0026-2692(95)00045-3
https://doi.org/10.1016/0026-2692(95)00045-3
Publikováno v:
Microelectronic Engineering. 15:267-270
AlInAs/GaInAs Metal-Semiconductor-Metal photodiodes have been fabricated by MBE. The structure incorporates an AlGaInAs graded region to avoid photocarrier trapping and to provide surface passivation. Low dark current and capacitance as well as good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6096598642ef5320ba76bfbdb592c1d8
https://doi.org/10.1016/0167-9317(91)90226-4
https://doi.org/10.1016/0167-9317(91)90226-4
Publikováno v:
Proceedings of Semiconducting and Semi-Insulating Materials Conference.
Electron traps in AlInAs/In/sub .52/(Ca/sub 1-x/Al/sub x/)/sub .48/As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and terna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63ab1d44ecfed2788ac44c64b0e92549
https://doi.org/10.1109/sim.1996.571102
https://doi.org/10.1109/sim.1996.571102
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
The fabrication and performance of a graded avalanche photodiode structure with a separate GaInAs photo-absorption layer and AlInAs avalanche region to achieve a pure electron injection are discussed. The quality of AlInAs as the avalanche region has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a23dacca620a701d540d37993447b7
https://doi.org/10.1109/iciprm.1991.147410
https://doi.org/10.1109/iciprm.1991.147410
Publikováno v:
Proceedings of Optical Fiber Communication Conference.
Avalanche photodiodes (APDs), when compared to PIN photodiodes, offer a large improvement in sensitivity; about 10 dB higher sensitivities are expected at 20 Gbit/s. Very good performances have already been demonstrated at 10 Gbit/s: -27,6 dBm, -27 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b396f951c3a541864f3277038bcc5ac
https://doi.org/10.1109/ofc.1997.719668
https://doi.org/10.1109/ofc.1997.719668
Publikováno v:
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.
High speed photodetectors are needed in optical communication systems and avalanche photodiodes are essential in highly sensitive photoreceivers at the 1.55 /spl mu/m wavelength. Avalanche photodiodes (APDs), when compared to PIN photodiodes, provide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4139f433c2fb2dac0ae294c335c80c10
https://doi.org/10.1109/iciprm.1997.600201
https://doi.org/10.1109/iciprm.1997.600201
Publikováno v:
11th International Conference on Integrated Optics and Optical Fibre Communications. 23rd European Conference on Optical Communications IOOC-ECOC97.
This paper describes the design procedure and experimental results of a high speed and high responsivity multimode AlGaInAs side-illuminated PIN photodiode. Fabricated devices exibit very low dark current (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e813ef2a13e0796bb82378219a2b31c
https://doi.org/10.1049/cp:19971411
https://doi.org/10.1049/cp:19971411
Publikováno v:
Integrated Optoelectronics for Communication and Processing.
Monolithic balanced pin-WET front-end for 1.3-1.5 un coherent transmissionLouis Giraudet, Yann Le Bellego, Jean-Pierre Praseuth, Eric Legros, Andre ScavennecCentre National d'Etudes des TelecommunicationsLaboratoire de Bagneux196 av. Henri Ravera1 92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71c5029e5981eb59bfda627fb6bb630
https://doi.org/10.1117/12.135012
https://doi.org/10.1117/12.135012
Autor:
J.P. Praseuth, E. Caquot, L. Nguyen, P. Blanconnier, M. Billard, F. Lugiez, A. Scavennec, P. Carer, Louis Giraudet
Publikováno v:
SPIE Proceedings.
The sensitivity of InGaAsIInP monolithic photoreceivers for 1 . 3 - 1. 5 . tm has been largely improved in recent years now reaching the sensitivity figures of hybrid InGaAs pin/GaAs MESFET receivers. The characteristics of an integrated InGaAsfJnP p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4ceb7d8e1551ec315c9f3064b3d712
https://doi.org/10.1117/12.24510
https://doi.org/10.1117/12.24510
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (9), pp.941-945. ⟨10.1051/rphysap:01990002509094100⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (9), pp.941-945. ⟨10.1051/rphysap:01990002509094100⟩
Des films de SiNx ont été déposés à basse température par UVCVD pour la passivation de photodiodes pin en GaInAs. La structure physique du SiNx a été évaluée par spectroscopie IR et ses caractéristiques électriques grâce à la réalisati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c232db1bf11466537f59e45a595576f
https://hal.archives-ouvertes.fr/jpa-00246260/file/ajp-rphysap_1990_25_9_941_0.pdf
https://hal.archives-ouvertes.fr/jpa-00246260/file/ajp-rphysap_1990_25_9_941_0.pdf
