Zobrazeno 1 - 10
of 54
pro vyhledávání: '"J.P. Piel"'
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2009, 518 (Issue 4), pp.1250-1253. ⟨10.1016/j.tsf.2009.03.221⟩
Thin Solid Films, Elsevier, 2009, 518 (Issue 4), pp.1250-1253. ⟨10.1016/j.tsf.2009.03.221⟩
The use of indium tin oxide (ITO) in conjunction with polymeric substrates requires deposition at low temperatures or room temperature, and with a limited or no thermal treatment. This process results in high resistivity materials. To achieve practic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75eb95adeb1b57ea7bacf799b05bbf2f
https://doi.org/10.1016/j.tsf.2009.03.221
https://doi.org/10.1016/j.tsf.2009.03.221
Publikováno v:
Applied Surface Science. 256:S96-S100
It is known for years that surface adsorption/desorption can be studied by in situ Spectroscopic Ellipsometry (SE). The physical adsorption of water or other small adsorbate molecule species on the surface of non-porous materials, gives rise to a Typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdce1f51001c2f443fdc281a491a6165
https://doi.org/10.1016/j.apsusc.2009.09.061
https://doi.org/10.1016/j.apsusc.2009.09.061
Publikováno v:
Thin Solid Films. :581-585
A new method to extract accurately the optical properties of anisotropic materials and multilayer structures is presented. The main difference compared to the literature is that we measure the Fourier coefficients of the ellipsometric signal α and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7c32b1ca069d5714d5551b9d7b0555
https://doi.org/10.1016/j.tsf.2004.01.040
https://doi.org/10.1016/j.tsf.2004.01.040
Autor:
J.P. Piel
Publikováno v:
Thin Solid Films. 234:447-450
For several years spectroscopic ellipsometry (SE) has been widely used in semiconductor or optical coatings technology to characterize the thicknesses and indices of thin layer deposited or grown on various substrates. In the case of a spectroscopic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4cac8a0b50f856345923c83d2d0d3c
https://doi.org/10.1016/0040-6090(93)90304-8
https://doi.org/10.1016/0040-6090(93)90304-8
Publikováno v:
Applied Surface Science. 50:346-352
Spectroscopic ellipsometry has been used to measure compositions and layer thicknesses of two-, three- and four-layer structures consisting of Al 0.2 Ga 0.8 As/GaAs and In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As/InP materials. A simple procedure has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af74c72e4949b0a8385057a7771abd87
https://doi.org/10.1016/0169-4332(91)90196-q
https://doi.org/10.1016/0169-4332(91)90196-q
Autor:
J. C. Fouere, Patrick Evrard, C. Defranoux, Hugo Bender, J.P. Piel, Pierre Boher, E. Bellandi
Publikováno v:
AIP Conference Proceedings.
In this study, we use vacuum UV spectroscopic ellipsometry (VUVSE) to characterize new high dielectric materials. Indeed, all the candidates for high k dielectrics become strongly absorbent when the wavelength is reduced down to 140nm. So, the correl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa49838b1971f2a27b3d207f21f9d399
https://doi.org/10.1063/1.1622462
https://doi.org/10.1063/1.1622462
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are discussed. The individual layer thicknesses ranged from 150 AA to 4500 AA, and excellent agreeme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62bc3bf772d795acbe897baffec230c
https://doi.org/10.1109/iciprm.1991.147411
https://doi.org/10.1109/iciprm.1991.147411
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).
A new phase shifting interferometry based on the integrating-bucket technique with sinusoidal phase modulation is presented. The phase modulation is achieved by sinusoidal oscillation of an objective and a mirror attached to a PZT. Phase images are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289c4304f2d8e424041afc6a5e3a4bfd
https://doi.org/10.1109/imnc.2001.984182
https://doi.org/10.1109/imnc.2001.984182
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).
Multilayer structures for 157 nm lithography show thinner and thinner layer thickness and are more and more sensitivity to the interface and surface roughness. The metrology of this kind of structure becomes very difficult to achieve with only one si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54e06883da940e41c6524b8c18d162c6
https://doi.org/10.1109/imnc.2001.984210
https://doi.org/10.1109/imnc.2001.984210