Zobrazeno 1 - 10
of 23
pro vyhledávání: '"J.P. Mondal"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:563-566
A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Delta >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829df6b69ab48d196bbd47ce126526cd
https://doi.org/10.1109/22.121733
https://doi.org/10.1109/22.121733
Autor:
Vladimir Sokolov, A. Contolatis, D. Carlson, M. Vickerberg, J. Geddes, J.P. Mondal, S. Bounnak, C. Anderson, R.C. Becker
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1388-1396
An MMIC transmitter for high-volume smart munition applications in Ka band is developed using 0.25 mu m MESFET technology. The transmitter, consisting of a voltage-controlled oscillator (VCO) and power amplifier (PA), delivers more than 100 mW of pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b0918fbaf26af14cac84298b4e76ba
https://doi.org/10.1109/4.156442
https://doi.org/10.1109/4.156442
Autor:
J.P. Mondal
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
In power amplifier applications, it is very common to scaleup large MESFETs at the output from smaller MESFET devices that are easily measured and characterized. A systematic procedure is given to predict the small-signal performance of large devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57567331d5f9deac6dd04f7b65b9a5dd
https://doi.org/10.1109/mwsym.1988.22048
https://doi.org/10.1109/mwsym.1988.22048
Autor:
J.P. Mondal, S. Bounnak, C. Anderson, M. Vickberg, Vladimir Sokolov, J. Geddes, T. Contolatis, D. Carlson, R.C. Becker
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A monolithic transmitter consisting of a voltage controlled oscillator and power amplifier has been successfully demonstrated for Ka-band high volume system applications (smart munitions) using nominally quarter micron MESFET technology. The results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86b6031150cfde160a05c16faf7ad90
https://doi.org/10.1109/gaas.1991.172658
https://doi.org/10.1109/gaas.1991.172658
Publikováno v:
SPIE Proceedings.
The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37883d352396f5e6a639821ca297e307
https://doi.org/10.1117/12.44510
https://doi.org/10.1117/12.44510
Autor:
Stan E. Swirhun, Mark Bendett, J.P. Mondal, Mary K. Hibbs-Brenner, Charles T. Sullivan, Paul E. Bauhahn, Sayan D. Mukherjee, R. Mactaggart, Vladimir Sokolov
Publikováno v:
SPIE Proceedings.
Approaches for future 'mixed application' monolithic integrated circuits (ICs) employing optical receive/transmit, RF amplification and modulation and digital control functions are discussed. We focus on compatibility of the photonic component fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d12e24b76d02b9590edd2f906937d2ed
https://doi.org/10.1117/12.44499
https://doi.org/10.1117/12.44499
Autor:
J.P. Mondal
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 36:1107-1110
The constant power contours have been measured on MESFETs with different doping profiles over the frequency range 8-16 GHz for a fixed input power level at different bias points. At each frequency, the contours are normalized with respect to the load
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d11b0829b782d8bca76d5307653e35
https://doi.org/10.1109/22.3642
https://doi.org/10.1109/22.3642
Autor:
J.P. Mondal, Tzu-Hung Chen
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 36:706-714
An improper choice of dimensions for the standards used in the microwave de-embedding procedure will cause errors in the determination of the propagation constant. This leads to unrealistic values for the attenuation constant, which in turn causes er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e8b223b113172e1cd089db66634f95
https://doi.org/10.1109/22.3575
https://doi.org/10.1109/22.3575
Autor:
J.P. Mondal
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 37:1085-1090
An appropriate scaling procedure is described for large four-finger MESFET cells with experimental verification. A comparison is presented between lumped and distributed modeling approaches. The scalability of elements in the equivalent circuit model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cba87554553e816a424bfd244516c28
https://doi.org/10.1109/22.24552
https://doi.org/10.1109/22.24552
Autor:
J.P. Mondal
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 35:403-408
A distributed model has been derived for MIM capacitors using a simple coupled-transmission-line approach. The model has been compared with measured S-parameter data from MIM capacitors having different aspect ratios fabricated on 4-mil GaAs substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55576c12b5a1a5ca23fb24e4cea47496
https://doi.org/10.1109/tmtt.1987.1133662
https://doi.org/10.1109/tmtt.1987.1133662