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pro vyhledávání: '"J.P. Locquet"'
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::570f8eedcc4a689126f8d2d1a97360d3
http://arxiv.org/abs/2101.03352
http://arxiv.org/abs/2101.03352
Publikováno v:
Klinische Pädiatrie.
Early-stage dynamics of metallic droplets embedded in the nanotextured Mott insulating phase of V2O3
Autor:
Paolo Franceschini, Pia Homm, J.P. Locquet, Francesco Banfi, Michele Fabrizio, Fulvio Parmigiani, Mariela Menghini, Sarnjeet S. Dhesi, Claudio Giannetti, Federico Cilento, Gabriele Ferrini, Francesco Maccherozzi, Andrea Ronchi
Publikováno v:
Physical Review B. 100
Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (IMTs) is key for controlling on demand the ultrafast switching in strongly correlated materials and nanode
Akademický článek
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Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Autor:
Leander Dillemans, Mariela Menghini, Lucian Covaci, Ruben Lieten, Pia Homm, D. Nasr Esfahani, Michel Houssa, B. Van Bilzen, Chen-Yi Su, Petar Bakalov, J.P. Locquet, Jin Won Seo, François M. Peeters
Publikováno v:
Applied Physics Letters. 107:149901
Autor:
Sandra Nuyts, F. Van den Heuvel, S. Maria, G. De Kerf, E. Van Limbergen, J.P. Locquet, E. Couteau
Publikováno v:
Radiotherapy and Oncology. 99:S417-S418
Autor:
Ventsislav K. Valev, Thierry Verbiest, S. Van Elshocht, Benjamin Vincent, Matty Caymax, J.P. Locquet, Maarten Vanbel, Valeri Afanas'ev
Publikováno v:
Journal of Applied Physics. 111:064504
Monitoring oxidation steps is an important factor during the fabrication of semiconductor devices, because transistor performance can be greatly affected by defects in the passivation layer. As an example, we discuss the formation of a gate stack in
Publikováno v:
Medical Physics. 38:3510-3510
Purpose: The use of high‐Z nano‐particles (NP) increases the dose in the nearby volume by absorbing more photons of keV energy. The resulting electrons deposit the dose locally. Additionally, Auger electrons are generated. In combination with tum