Zobrazeno 1 - 10
of 78
pro vyhledávání: '"J.P. Laine"'
Publikováno v:
Quantum Sensing, Imaging, and Precision Metrology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91884358f55e9cda44f62254cf72940a
https://doi.org/10.1117/12.2657355
https://doi.org/10.1117/12.2657355
Publikováno v:
2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo).
Integrated circuits such as automotive transceivers require very high EMC and ESD performance within a minimum footprint. This paper illustrates the study of an integrated LIN transceiver and the optimization of collateral effects between ESD and EMC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e2d4c21bd5aedf2c3638aa0af70e183
https://doi.org/10.1109/emccompo.2019.8919869
https://doi.org/10.1109/emccompo.2019.8919869
Kniha
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Akademický článek
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Akademický článek
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High-level substrate current effects in P/sup -/-epitaxy/P/sup +/-substrate Smart Power Technologies
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
Substrate current injection, and in particularly minority carrier injection, is one of the major redesign causes in Smart Power technology. This substrate parasitic current induces unexpected failure system such as latchup in CMOS circuitry. The P/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19106f346bffdb32d9c690ac0d84f3f
https://doi.org/10.1109/ispsd.2003.1225276
https://doi.org/10.1109/ispsd.2003.1225276
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.
Substrate current injection, and particularly minority carrier injection, is one of the major causes for redesign in smart power technology. This substrate parasitic current induces unexpected failure system such as latch-up in CMOS circuitry or anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4889d37e9552eedae9038a5e89185d
https://doi.org/10.1109/ispsd.2002.1016224
https://doi.org/10.1109/ispsd.2002.1016224
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92423e912c02da80a1597102f0278d43
https://doi.org/10.1109/bipol.2002.1042882
https://doi.org/10.1109/bipol.2002.1042882
Publikováno v:
1996 IEEE Ultrasonics Symposium. Proceedings.
The filter damage induced by high-intensity SAW and large electrode currents is studied. A model based on the coupling-of-modes formalism is developed to represent the dissipation of power in the resistive-part impedance of the impedance elements in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edcb8066fcf9b202697cd9d61099c308
https://doi.org/10.1109/ultsym.1996.583771
https://doi.org/10.1109/ultsym.1996.583771
Publikováno v:
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
Minority-carrier injection is one of the major causes of redesign in Smart Power technology. This parasitic current generated during the power stage turn off can be the source of dramatic failure such as latch-up. We propose in this paper a new prote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd44d9fc3d9d3c2ff93209f5626f44f
https://doi.org/10.1109/ispsd.2001.934627
https://doi.org/10.1109/ispsd.2001.934627