Zobrazeno 1 - 10
of 89
pro vyhledávání: '"J.P. Hirtz"'
Publikováno v:
Microelectronics Reliability. 38:689-696
The results reported in this publication are related to the qualification of a pilot line at THOMSON-CSF/TCS for the fabrication of 60 W QCW linear bar arrays. This 2-year program supported by the French MoD has been supervised by the Direction de la
Publikováno v:
IEEE Electron Device Letters. 15:380-382
GaInP/GaAs heterojunction bipolar transistors (HBT's) have been fabricated on epitaxial layers grown by chemical beam epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were u
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
GaInP/GaAs Heterojunction Bipolar Transistors (HBT's) are a promising alternative to AlGaAs/GaAs devices and demonstrated encouraging DC and microwave performance. Both MOCVD and MOMBE have been used to grow HBT structures and typically AsH/sub 3/ an
Autor:
Eric C. Larkins, J. Morgan, E. Vassilakis, J.W. Orton, F.X. Daiminger, Ian Harrison, A. V. Andrianov, J.P. Hirtz, S.R.A. Dods
Publikováno v:
Scopus-Elsevier
Broad area laser diodes are excellent sources of light for high output power applications. The main factors limiting the output power, expected lifetime, and the reliability of these devices are thermal management and avoiding optical damage. The deg
Publikováno v:
Proceedings of European Meeting on Lasers and Electro-Optics CLEOE-96.
Publikováno v:
Proceedings of European Meeting on Lasers and Electro-Optics CLEOE-96.
THOMSON-CSF Components spécifiques (TCS) has recently developped a set of products of high power Laser diodes, covering CW & QCW linear bar arrays emitting at 808 nm and 980 nm, fiber-coupled CW bar arrays, stacks with passive and active coolings, a
Publikováno v:
Journal of Crystal Growth. 107:1076
Publikováno v:
Electronics Letters. 26:1027
High speed metal-semiconductor-metal photodetectors sensitive at 1.3 μm have been realised on Si substrates. The active layer consists of a strained InGaAs/GaAs superlattice grown by molecular beam epitaxy on GaAs-on-Si. The device exhibits a very f