Zobrazeno 1 - 10
of 150
pro vyhledávání: '"J.P. Gambino"'
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Autor:
H. Ziad, Zoltan Kiss, D. Price, T. Frank, Rick Jerome, J.P. Gambino, J. Byrnes, V. Samu, A. Kerekes, A. Ross
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A number of More-than-Moore (MtM) devices use Silicon-on-Insulator (SOI) wafers, including power devices and CMOS image sensors. Non-contact capacitance-voltage (CV) and photoluminescence measurements are well established for characterization of diel
Autor:
J.P. Gambino, Kaitlyn Pabst, B. Greenwood, Konner E. K. Holden, Chris Kendrick, Derryl Allman, Robin Daugherty, Gavin D. R. Hall, Michael Cook
Publikováno v:
IRPS
High-K metal-insulator-metal capacitors are used in many high-performance applications that require both excellent energy storage and minimal energy loss. Often the increase in dielectric permittivity is coupled with an increase in dielectric relaxat
Autor:
D. Price, J.P. Gambino, Matt Ring, K. Kimura, R.C. Jerome, Kevin A. Stewart, A. Hasegawa, P. Hulse, K. Noldus
Publikováno v:
IRPS
A very stable resistor is needed for analog integrated circuits employed in harsh automotive environments. Precision SiCr thin-film resistors have been characterized by DC and pulsed I-V measurements, high-temperature operating life, and high tempera
Autor:
Carrie Taylor, Robert Watkins, Wentao Qin, J.P. Gambino, Tim Nitschke, Will Barth, Harold Anderson
Publikováno v:
International Symposium for Testing and Failure Analysis.
Low-K dielectric adhesion problems were observed at M1 and M2 levels during thermal cycling of a flip chip product. Nano-indentation of simple BEOL test structures was used to determine the relative strength of the various interfaces in the BEOL stac
Publikováno v:
IRPS
It is well-known that residual TiN on Al bond pads is detrimental to wire bond reliability. However, the exact reliability impact has not been reported. In this work, we characterize the effect of residual TiN on Au wire bond reliability during high
Publikováno v:
Journal of Vacuum Science & Technology B 38(2020), 064004
Deep trenches, as essential elements of silicon chips used in electronic high-power and high-frequency devices, are known as starting points for dislocation generation under the influence of internal mechanical stresses resulting mainly from the diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8682018aa71af682fa4a4b1de4c02299
https://publica.fraunhofer.de/handle/publica/265483
https://publica.fraunhofer.de/handle/publica/265483
Autor:
Wentao Qin, Rebecca Burgin, Gordy Grivna, Jim Steinwall, Scott Donaldson, J.P. Gambino, George Chang, Chuck Belisle, Lahcen Boukhanfra, Denise Barrientos, Dan Rogers, Julien Thiefain
Publikováno v:
Microelectronics Reliability. 120:114102
The resistance between an aluminum (Al) metal line and a tungsten (W) via increased after thermal stress. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual WO3 on the W plug. Since the resistivity of
Autor:
Sylvain Joblot, Zoltan Kiss, I. Mica, L. Jastrzebski, B. Greenwood, Laszlo Dudas, Roffarello, A. Galbiati, Maxime Cannac, Maria Luisa Polignano, P. Basa, Gyorgy Nadudvari, M. Nagy, J.P. Gambino, Romain Duru, P. Monge, Imre Lajtos, G. Molnar, A. Pongracz, Delphine Le-Cunff
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
As Si is an indirect band gap material, the PL generated by phonon assisted band-to-band (B2B) radiative recombination (of energy equal to energy gap of Si) is very weak; about 10 orders of magnitude lower than the exciting photon flux [1] . If cryst
Autor:
Zoltan Kiss, M. Nagy, L. Roszol, B. Greenwood, J. Byrnes, K. Truong, Ashley Lee, Anita Pongracz, J.P. Gambino, L. Jastrzebski, J. Kimball, G. Molnar, S. Sridaran, Santosh Menon, Gyorgy Nadudvari
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, fol