Zobrazeno 1 - 10
of 71
pro vyhledávání: '"J.P. Denton"'
Publikováno v:
Journal of Microelectromechanical Systems. 12:185-192
This paper describes a novel technique for the fabrication of surface micromachined thin silicon cantilever beams using merged epitaxial lateral overgrowth (MELO) of silicon and chemical-mechanical polishing (CMP). The objective is to demonstrate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede2cb49ecda9a315a5c05b2bbb211c3
https://doi.org/10.1109/jmems.2003.809974
https://doi.org/10.1109/jmems.2003.809974
Autor:
Paul I. Hendricks, Timothy A. Roach, R. Graham Cooks, Zheng Ouyang, Matthew A. Kirleis, Matthew T. McNicholas, Jason Duncan, Tsung-Chi Chen, Frank J. Boudreau, Linfan Li, Jon K. Dalgleish, Jacob T. Shelley, Chien-Hsun Chen, Robert J. Noll, J.P. Denton
Publikováno v:
Analytical chemistry. 86(6)
A major design objective of portable mass spectrometers is the ability to perform in situ chemical analysis on target samples in their native states in the undisturbed environment. The miniature instrument described here is fully contained in a weara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d757ac8669ca1c184a3431d814fad15c
https://pubmed.ncbi.nlm.nih.gov/24521448
https://pubmed.ncbi.nlm.nih.gov/24521448
Autor:
J.P. Denton, I. M. Lee, Eric P. Kvam, Gerold W. Neudeck, Wei‐Chung Wang, Michael T. K. Koh, Christos G. Takoudis
Publikováno v:
Journal of The Electrochemical Society. 144:1095-1099
Three process considerations were identified as essential for the selective epitaxial growth (SEG) of SiGe in hot-wall tubular low pressure chemical vapor deposition reactors. A thermodynamic analysis of the system revealed that the hydrogen bake con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc899019b9fc8a134bae138af484572
https://doi.org/10.1149/1.1837538
https://doi.org/10.1149/1.1837538
Publikováno v:
Applied Physics Letters. 83:4613-4615
Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e405e571b19406cf3e4c41818da9bd
https://doi.org/10.1063/1.1630853
https://doi.org/10.1063/1.1630853
Publikováno v:
IEEE Electron Device Letters. 13:392-395
A polysilicon contacted subcollector (PCS) bipolar junction transistor (BJT) was fabricated using selective epitaxial growth (SEG) of silicon to form the active region. The fabrication is the first step in the development of a novel 3-D BiCMOS proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27cce03b404826b09d7261fc4cdae0d4
https://doi.org/10.1109/55.192769
https://doi.org/10.1109/55.192769
Publikováno v:
IEEE Transactions on Electron Devices. 38:1660-1665
A quasi-dielectrically isolated bipolar junction transistor (QDI-BJT) was developed for intelligent power ICs. Using a combination of junction and dielectric isolation, the QDI-BJT was achieved by selective epitaxial growth (SEG) of single-crystal si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da1043bda16c365a203f8893b0059828
https://doi.org/10.1109/16.85164
https://doi.org/10.1109/16.85164
Publikováno v:
IEEE Electron Device Letters. 20:194-196
This paper presents for the first time, multiple layers of silicon-on-insulator (MLSOI) device islands fabricated using selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) techniques. MLSOI has the potential for ultra dense device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e6f7e520f00dc3faffa42772724fff
https://doi.org/10.1109/55.761012
https://doi.org/10.1109/55.761012
Autor:
J.P. Denton
Publikováno v:
Proceedings Frontiers in Education 35th Annual Conference.
This work in progress presents a teaming approach to writing laboratory reports. A journal-style format of authoring and editing is used. The author and editors are assessed as a small group and share the score on the report as a team. A student perc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a159c599ac8408b62f00442ade079f1
https://doi.org/10.1109/fie.2005.1611985
https://doi.org/10.1109/fie.2005.1611985
Autor:
J.P. Denton, Gerold W. Neudeck
Publikováno v:
IEEE Electron Device Letters. 17:509-511
P-channel dual-gated thin-film silicon-on-insulator (DG-TFSOI) MOSFETs have been fabricated with an isolated buried polysilicon backgate in an SOI island formed by epitaxial lateral overgrowth (ELO) of silicon. This structure allows individual operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a601cfcfd12d3cd009be73aacb935159
https://doi.org/10.1109/55.541764
https://doi.org/10.1109/55.541764
Publikováno v:
IEEE Electron Device Letters. 17:267-269
Selective epitaxial growth (SEG) of silicon has not had widespread use as a dielectric isolation technology due to the near sidewall defects at the SiO/sub 2//Si interface. These defects are located in the first 1-2 /spl mu/m of the SEG/sidewall SiO/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c10a4844ecdb4160a7cc10d022c4b1
https://doi.org/10.1109/55.496453
https://doi.org/10.1109/55.496453