Výsledky vyhledávání

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Autor: M. Mitchell, John D. Cressler, John Papapolymerou, J.P. Comeau, M.A. Morton

Publikováno v: IET Microwaves, Antennas & Propagation. 2:19-22

A hybrid pi/t bit passive topology is presented to enable a significant reduction in the die area for a high-pass/low-pass phase shifter is presented. A hybrid-topology 5 bit digital X-band phase shifter was designed, fabricated and tested using a 20

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::599d8d1f83aa372e13a962696f0810f0
https://doi.org/10.1049/iet-map:20070077

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Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

Autor: M. Varadharajaperumal, E.J. Montes, Gyorgy Vizkelethy, Akil K. Sutton, Robert A. Reed, R.M. Diestelhorst, Paul W. Marshall, J.P. Comeau, John D. Cressler, G. Espinel, R. Krithivasan, Jonathan A. Pellish, Marcus H. Mendenhall, Guofu Niu, Michael L. Alles, Ronald D. Schrimpf, Robert A. Weller

Publikováno v: IEEE Transactions on Nuclear Science. 53:3298-3305

Delayed charge collection from ionizing events outside the deep trench can increase the SEU cross section in deep trench isolation technologies. Microbeam test data and device simulations demonstrate how this adverse effect can be mitigated through s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d62c7b9cc2c3da61ac1692b334e81fa
https://doi.org/10.1109/tns.2006.885798

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Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters

Autor: M. Mitchell, M.A. Morton, John Papapolymerou, John D. Cressler, J.P. Comeau

Publikováno v: IEEE Transactions on Microwave Theory and Techniques. 54:4032-4040

A comprehensive analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and nonideal switches is presented. Each component utilized in the implementation of a monolithic h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7830264570a60c290d8fa8bdd648c187
https://doi.org/10.1109/tmtt.2006.886162

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A 28-GHz SiGe Up-Conversion Mixer Using a Series-Connected Triplet for Higher Dynamic Range and Improved IF Port Return Loss

Autor: John D. Cressler, J.P. Comeau

Publikováno v: IEEE Journal of Solid-State Circuits. 41:560-565

This work presents a fully integrated SiGe microwave up-conversion mixer, utilizing a new circuit topology consisting of a common-base, series-connected triplet at the IF port to achieve a significant improvement in dynamic range. This circuit functi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9be9056ab2243860c2f39c8991f4c5ab
https://doi.org/10.1109/jssc.2005.864129

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Proton and gamma radiation effects in a new first-generation SiGe HBT technology

Autor: Leonard R. Rockett, Monir El-Diwany, Tuyet Bach, Paul W. Marshall, Cheryl J. Marshall, B.M. Haugerud, Reed K. Lawrence, Courtney Mitchell, Akil K. Sutton, John D. Cressler, J.P. Comeau, A. P. Gnana Prakash, Ray Ladbury, Nadim F. Haddad, Mustansir M. Pratapgarhwala

Publikováno v: Solid-State Electronics. 50:181-190

The effects of proton and gamma irradiation on a new commercially available SiGe technology are investigated for the first time. The results of proton irradiation on a differential SiGe HBT LC oscillator are also reported in order to gauge circuit-le

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7eb9a1badf9669719a6fd11305aed1f8
https://doi.org/10.1016/j.sse.2005.11.007

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Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

Autor: T.H. Ning, Akil K. Sutton, Cheryl J. Marshall, Qingqing Liang, John D. Cressler, Tianbing Chen, Paul W. Marshall, Marco Bellini, J.P. Comeau, B.M. Haugerud, Jin Cai

Publikováno v: IEEE Transactions on Nuclear Science. 52:2353-2357

Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible silicon-on-insulator (SOI) are investigated for the first time. Proton irradiation at 63 MeV is found to introduce base leakage current at low base-emitter voltage, delay th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12e8c80694445a00e326c44a42d0ebdd
https://doi.org/10.1109/tns.2005.860726

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Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials

Autor: R. Van Art, B.M. Haugerud, Akil K. Sutton, Wei-Min Lance Kuo, A. Karroy, Robert A. Reed, John D. Cressler, J.P. Comeau, Paul W. Marshall

Publikováno v: IEEE Transactions on Nuclear Science. 51:3743-3747

The proton tolerance of SiGe heterojunction bipolar transistors (HBTs) fabricated on a variety of substrate materials is investigated for the first time. The present SiGe HBT BiCMOS technology represents only the second commercially-available SiGe pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a528ec4e09528371f83f5920aeeffd1
https://doi.org/10.1109/tns.2004.839253

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An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator

Autor: A.P.G. Prakash, J.M. Andrews, Laleh Najafizadeh, John D. Cressler, J.P. Comeau

Publikováno v: IEEE Microwave and Wireless Components Letters. 17:349-351

This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS tech

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54d4b52126d23eba62cd6563b5d3bdd6
https://doi.org/10.1109/lmwc.2007.895703

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