Zobrazeno 1 - 10
of 29
pro vyhledávání: '"J.P. Chiu"'
Publikováno v:
IEEE Transactions on Electron Devices. 60:978-984
NBTI trapped charge characteristics and recovery mechanisms are examined by a statistical study of individual trapped charge emissions in nanoscale HfSiON/metal gate pMOSFETs. We measure individual trapped charge emission times in NBTI recovery in a
Autor:
Tahui Wang, M.Y. Lee, C.W. Li, Chih-Yuan Lu, Kuang-Chao Chen, Yueh-Ting Chung, Tzu-I Huang, You-Liang Chou, J.P. Chiu
Publikováno v:
IEEE Transactions on Electron Devices. 59:1371-1376
A Vt retention distribution tail in a multitime-program (MTP) silicon-oxide-nitride-oxide-silicon (SONOS) memory is investigated. We characterize a single-program-charge-loss-induced ΔVt in NOR-type SONOS multilevel cells (MLCs). Our measurement sho
Autor:
Yuan-Peng Chao, Chih-Yuan Lu, Tahui Wang, Kuang-Chao Chen, H.C. Ma, Yueh-Ting Chung, J.P. Chiu, Tung-Yang Lin, You-Liang Chou
Publikováno v:
IEEE Transactions on Electron Devices. 58:623-630
A novel random telegraph signal (RTS) method is proposed to characterize the lateral distribution of injected charge in program and erase states in a nor-type silicon-oxide-nitride-oxide-silicon Flash memory. The concept of this method is to use RTS
Autor:
J.P. Chiu, Ta-Wui Cheng
Publikováno v:
Minerals Engineering. 16:205-210
This paper describes research into the use of granulated blast furnace slag as an active filler in the making of geopolymers. During this work it was found that geopolymer setting time correlates well with temperature, potassium hydroxide concentrati
Publikováno v:
IEEE Electron Device Letters. 33:176-178
Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (Vt) fluctuations in high-κ gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stre
Publikováno v:
Minerals Engineering. 15:271-275
There are more than 40 serpentine mines in Taiwan, and most of them are located in Hualien (Eastern Taiwan). Almost all the serpentine dimension stones produced from these mines are exported. Crushed serpentine is used as a flux material for iron-mak
Publikováno v:
Ceramics International. 28:779-783
Vitrification is one of the technological options for treating toxic waste. This paper reports the results of the feasibility study of utilizing fly ash from municipal waste incinerators by powder sintering technology. This process was used to transf
Autor:
Chih-Yuan Lu, Tahui Wang, S.H. Ku, H.C. Ma, J.P. Chiu, Kuang-Chao Chen, N.K. Zou, V. Chen, Yu-Che Chou, W.P. Lu
Publikováno v:
IEEE Electron Device Letters. 30:1188-1190
Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SON
Autor:
Tahui Wang, You-Liang Chou, J.P. Chiu, Yuan-Peng Chao, Kuang-Chao Chen, H.C. Ma, Chih-Yuan Lu
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potentia
Autor:
Tahui Wang, S.H. Ku, J.P. Chiu, Kunyuan Chen, H.C. Ma, W.P. Lu, Vincent Chen, Chih-Yuan Lu, You-Liang Chou, N.K. Zou
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Nitride program charge effects on random telegraph noise (RTN) in SONOS flash cells are investigated. We measure and simulate RTN amplitudes in floating gate flash, planar SONOS, and FinFET SONOS cells. We find that a planar SONOS has a wide spread i