Zobrazeno 1 - 10
of 115
pro vyhledávání: '"J.P Chatelon"'
Autor:
V. Vallejo-Otero, N. Crespo-Monteiro, A. Valour, C. Donnet, S. Reynaud, N. Ollier, M.F. Blanc Mignon, J.P. Chatelon, Y. Bleu, E. Gamet, Y. Jourlin
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100430- (2023)
Zirconium nitride (ZrN) is widely used in many industrial sectors for its outstanding performances including its mechanical properties, high chemical and thermal stability. Associated with its plasmonic behavior, these properties make ZrN a suitable
Externí odkaz:
https://doaj.org/article/2e551ab2e1cf4fa494eba5ea26f25c5a
Akademický článek
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Publikováno v:
2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP).
Autor:
N. Labchir, M. Sajieddine, J.P. Chatelon, Ahmed Ihlal, D. Dufeu, A. Ait Hssi, Didier Vincent, A. Hannour
Publikováno v:
Journal of Magnetism and Magnetic Materials
Journal of Magnetism and Magnetic Materials, Elsevier, 2020, 510, pp.166952. ⟨10.1016/j.jmmm.2020.166952⟩
Journal of Magnetism and Magnetic Materials, Elsevier, 2020, 510, pp.166952. ⟨10.1016/j.jmmm.2020.166952⟩
Well-crystallized CoFe2O4 nanowires are grown by electrodeposition into anodic alumina oxide (AAO) membrane. The XRD and EDS analysis confirmed the synthesis of pure CoFe2O4 with average grain size ranging from 30 to 22 nm. The SQUID investigations r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69db90a725d5ef8497621279d5b06b79
https://hal.archives-ouvertes.fr/hal-02944204
https://hal.archives-ouvertes.fr/hal-02944204
Publikováno v:
2020 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP).
The characterization of two-port integrated planar devices operating at low frequencies (less than a few tens of MHz) is a new challenge nowadays. This paper presents integrated inductors characterization results performed by using an impedance-meter
A method to determine winding losses in integrated inductors and separate skin and proximity effects
Autor:
A. Abderahim, Jean Jacques Rousseau, S. Capraro, David Pietroy, J.P. Chatelon, M. Koularambaye
Publikováno v:
SN Applied Sciences
SN Applied Sciences, Springer Verlag, 2020, 2 (6), ⟨10.1007/s42452-020-2880-3⟩
SN Applied Sciences, Springer Verlag, 2020, 2 (6), ⟨10.1007/s42452-020-2880-3⟩
This paper presents a method to determine winding losses from scattering matrix parameters in planar inductors. Winding losses are taken into account by a dependent frequency resistance. This method allows losses to be separated in two parts for core
Akademický článek
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Autor:
Nicole Doumit, J.P. Chatelon, M.-F. Blanc-Mignon, Jean Jacques Rousseau, Bonaventure Danoumbé, S. Capraro
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 72, pp.30-33. ⟨10.1016/j.microrel.2017.03.037⟩
Elsevier
Microelectronics Reliability, Elsevier, 2017, 72, pp.30-33. ⟨10.1016/j.microrel.2017.03.037⟩
Elsevier
This article is devoted to the inductance and resistance evolution of a coreless inductor depending on temperature. The inductors are fabricated of thin copper films deposited on an alumina substrate and characterized up to 10 MHz with an impedance a
Autor:
Jean Jacques Rousseau, J.P. Chatelon, D.A. Oumar, David Pietroy, S. Capraro, M.I. Boukhari, M. A. Taha
Publikováno v:
2019 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP).
The characterization of integrated planar devices is a new challenge nowadays. This paper presents a new method and techniques for measuring integrated devices where their operating frequency is lower than 100 MHz. The characterization is performed b
Autor:
Michael Trinczek, J.P. Chatelon, Philippe Paillet, Sylvain Girard, Jean Jacques Rousseau, David Pietroy, M.I. Boukhari, D.A. Oumar, S. Capraro
Publikováno v:
2019 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP).
This paper presents the radiation influence on integrated magnetic inductors properties. Characterizations have been performed with an impedance-meter and a vector network analyzer on gamma and proton irradiated inductors. Concerning gamma radiation,