Zobrazeno 1 - 10
of 377
pro vyhledávání: '"J.M. Zavada"'
Autor:
J.M. Zavada, R.G. Wilson
Publikováno v:
Materials Science and Engineering: R: Reports. 73:101-128
Based on secondary ion mass spectrometry (SIMS) measurements, we have compiled state-of-the-art data concerning dopant elements and natural impurities in the wide bandgap semiconductor materials diamond, SiC, ZnSe, GaN and AlN. Samples were prepared
Autor:
H. Asahi, S.M. Bedair, V. Dierolf, S. Dong, N.A. El-Masry, S. Emura, I.T. Ferguson, Y. Fujiwara, T. Fukushima, J.K. Furdyna, S. Gupta, S. Hasegawa, H.X. Jiang, M.H. Kane, H. Katayama-Yoshida, A. Koizumi, V. Kumar, W.R.L. Lambrecht, J.Y. Lin, X. Liu, A. Masago, G.D. Metcalfe, B. Mitchell, N. Nepal, A. Ney, H. Ohta, S. Okubo, E.D. Readinger, K. Sato, M. Seike, B.W. Wessels, N. Woodward, J.M. Zavada, Y.K. Zhou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d75dc7edd766f1e7a6fc7164371755bc
https://doi.org/10.1016/b978-0-08-100041-0.01002-7
https://doi.org/10.1016/b978-0-08-100041-0.01002-7
Autor:
Fan Ren, J. W. Lee, Stephen J. Pearton, Catherine Vartuli, J. D. MacKenzie, Randy J. Shul, Robert G. Wilson, J.M. Zavada, J.R. Mileham, C. R. Abernathy
Publikováno v:
Scopus-Elsevier
Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps, in addition to its effects during metalorganic chemical vapor depo
Autor:
C. R. Abernathy, Stephen J. Pearton, J.M. Zavada, John C. Zolper, Fan Ren, Robert G. Wilson, M. Hagerott-Crawford, R.G. Schwartz, Randy J. Shul, S.P. Kilcoyne
Publikováno v:
Materials Science and Engineering: B. 38:138-146
Advances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V
Publikováno v:
Solid-State Electronics. 38:1329-1333
Twelve different elements used for doping or isolation were implanted into GaN (and selected species into AlN and InN), and the resulting range parameters were measured by secondary ion mass spectrometry. For lighter elements such as Be, F and H, the
Publikováno v:
Electronics Letters. 31:327-329
Deuterium concentrations of ≥ 1021 cm-3 can be introduced into epitaxial InAlN and InAlGaN by plasma exposure at 250°C. This produces a decrease of approximately a factor of 10 in the n-type carrier concentration in these materials, but can be rev
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Erbium (Er) doped AlGaAs-GaAs multiple quantum well heterostructures have been grown by molecular beam epitaxy and optically characterized using photoluminescence. It was found that the Er/sup 3+/ luminescence of the MQW structures with Er doped GaAs
Autor:
P. D. Milewski, Daniel J. Lichtenwalner, R. M. Kolbas, Angus I. Kingon, D. Zhang, J.M. Zavada
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Light emission characteristics from silicon nanoparticles consisting of a crystalline core encased in an amorphous oxide shell are reported. The particles were thermally oxidized to further reduce the silicon core dimensions. Photoluminescence measur
Publikováno v:
Electronics Letters. 31:496-497
The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n+ and p+ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the d
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