Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J.M. Uro"'
Publikováno v:
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..
A 4-bit D-MESFET GaAs ADC (analog/digital converter) has been designed, processed, and tested. The circuit has a flash structure and includes an original false-state-corrector circuit. A sample and hold has been placed at the quantizer input to impro
Publikováno v:
Proceedings of the IEEE 1988 Custom Integrated Circuits Conference.
Commercial GaAs ICs for high-speed (6-bit, 1G-sample/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently available as samples. Diode brid
Publikováno v:
IEEE Journal of Solid-State Circuits. 24:223-228
GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridg
Publikováno v:
IEEE 1984 Ultrasonics Symposium.
To meet the need for wideband programmable transversal filter, we have been studying a new monolithic filter integrated in GaAs. The substrate is divided into a semi-insulated region bearing a SAW tapped delay line, and a semiconducting area incorpor
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Omar Wing
Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications syst