Zobrazeno 1 - 10
of 116
pro vyhledávání: '"J.M. Slaughter"'
Autor:
H. Wu, V. Katragadda, E. Evarts, E. Edwards, R. Southwick, A. Dutta, G. Lauer, V. Mehta, R. Johnson, O. van der Straten, A. Reznicek, M. Wordeman, M. Rizzolo, R. Patlolla, D. Metzler, C. Yang, D. Edelstein, D. Canaperi, S. Teehan, J.M. Slaughter, D.C. Worledge
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5859f04041fcace30727c2e609d802a5
https://doi.org/10.1109/iedm19574.2021.9720539
https://doi.org/10.1109/iedm19574.2021.9720539
Autor:
G. Steiner, Kenneth H. Smith, Mark F. Deherrera, Gregory W. Grynkewich, Srinivas V. Pietambaram, Jijun Sun, Renu W. Dave, J.M. Slaughter, B. Craigo, Johan Åkerman, Saied N. Tehrani
Publikováno v:
IEEE Transactions on Magnetics. 42:1935-1939
We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e2cec194357cf2b9b0e9f17a7341fc
https://doi.org/10.1109/tmag.2006.877743
https://doi.org/10.1109/tmag.2006.877743
Autor:
Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky
Publikováno v:
IEEE Transactions on Magnetics. 41:132-136
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789b241ceda36f221bc524eaeeae684f
https://doi.org/10.1109/tmag.2004.840847
https://doi.org/10.1109/tmag.2004.840847
Akademický článek
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Autor:
Saied N. Tehrani, Johan Åkerman, Mark F. Deherrera, Renu W. Dave, J.M. Slaughter, J.T. Martin, Jijun Sun
Publikováno v:
IEEE Transactions on Magnetics. 42:2661-2663
We present a detailed investigation into the intrinsic tunnel barrier reliability in AlOx-based magnetic tunnel junctions (MTJs) as a function of aluminum thickness and oxidation time. The intrinsic reliability is measured as the ramped breakdown vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c60bfddf4cb974164c57239b257f9d
https://doi.org/10.1109/tmag.2006.879735
https://doi.org/10.1109/tmag.2006.879735
Autor:
Renu W. Dave, J.M. Slaughter, Jijun Sun, Srinivas V. Pietambaram, Jason Allen Janesky, G. Steiner
Publikováno v:
IEEE Transactions on Magnetics. 40:2619-2621
Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6d1055dc5b8c284a55176a172c1a9e
https://doi.org/10.1109/tmag.2004.834209
https://doi.org/10.1109/tmag.2004.834209
Autor:
J.M. Slaughter
Publikováno v:
2007 65th Annual Device Research Conference.
In this paper we review recent progress, present specifics of Freescale's commercial MRAM device, and discuss the future outlook for MRAM technology, including the extension of Toggle MRAM to meet industrial/automotive requirements, and scaling behav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf15389bf1f8006feaa8abb864921c8
https://doi.org/10.1109/drc.2007.4373737
https://doi.org/10.1109/drc.2007.4373737
Autor:
Bradley N. Engel, Gregory W. Grynkewich, J.M. Slaughter, Mark A. Durlam, P. Shah, Mark F. Deherrera, Bich-Yen Nguyen, J. Salter, B. Martino, Young Sir Chung
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. MRAM is a uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcfdbbc0d656eda6b60b4f3aa0ff40f6
https://doi.org/10.1109/icicdt.2007.4299546
https://doi.org/10.1109/icicdt.2007.4299546
Publikováno v:
Physical review letters. 99(4)
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::077aaed27294a1b5a54c3ea33b680af1
https://pubmed.ncbi.nlm.nih.gov/17678400
https://pubmed.ncbi.nlm.nih.gov/17678400
Publikováno v:
Physical Review B. 74
The tunneling conductance of three varieties of $\mathrm{Co}\mathrm{Fe}\mathrm{B}∕\mathrm{Mg}\mathrm{O}∕\mathrm{Co}\mathrm{Fe}\mathrm{B}$ magnetic tunnel junctions depends quadratically on the applied voltage to anomalously high biases. Within th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944b86678e92cc848c2236459e4889e6
https://doi.org/10.1103/physrevb.74.212404
https://doi.org/10.1103/physrevb.74.212404