Zobrazeno 1 - 10
of 94
pro vyhledávání: '"J.M. Myoung"'
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::176a2ea97235057630c0df8d05502a36
https://doi.org/10.2139/ssrn.4246377
https://doi.org/10.2139/ssrn.4246377
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90dd34ff577a2cd5208fe9a1ffbf536
https://doi.org/10.2139/ssrn.4064348
https://doi.org/10.2139/ssrn.4064348
Publikováno v:
Applied Surface Science. 605:154835
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d51532cf45b6fedc6df53aa98eb55967
https://doi.org/10.1016/j.apsusc.2022.154835
https://doi.org/10.1016/j.apsusc.2022.154835
Autor:
Kalyan Das, N. Tripathy, Tae Il Lee, Dong Ha Kim, Jyoti Prakash Kar, S. P. Ghosh, J.M. Myoung
Publikováno v:
Ceramics International. 42:138-145
Hafnium oxide (HfO2) ceramic thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various RF powers and substrate temperatures. The morphological and electrical properties of the sputtered films were invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f48211646026a6657cd7a57fd8d979b0
https://doi.org/10.1016/j.ceramint.2015.08.038
https://doi.org/10.1016/j.ceramint.2015.08.038
Publikováno v:
Advanced Functional Materials. 24:4689-4697
Solution-processed oxide semiconductors (OSs) used as channel layer have been presented as a solution to the demand for flexible, cheap, and transparent thin-film transistors (TFTs). In order to produce high-performance and long-sustainable portable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a60f148212d4eb483b6baf62dcdbe8
https://doi.org/10.1002/adfm.201400588
https://doi.org/10.1002/adfm.201400588
Autor:
Hong Koo Baik, Keon-Hee Lim, Moon Sung Kang, Si Yun Park, Jeong Ho Cho, J.M. Myoung, Tae Il Lee, Kyongjun Kim, Youn Sang Kim, Beom Joon Kim
Publikováno v:
Advanced Materials. 24:834-838
) and its dep-osition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for trans-parent applications, and transparency is one of the key issues for future display technology. Consequently, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30afd92ee220cee66de9d46393936125
https://doi.org/10.1002/adma.201103173
https://doi.org/10.1002/adma.201103173
Autor:
Hyun Jong Lee, Jong J. Park, Won Gun Koh, Unyong Jeong, Ji H. Choi, Jae H. Hur, Sung W. Lee, Jeong Ho Cho, J.M. Myoung
Publikováno v:
Nano Letters. 10:347-351
High-performance organic field-effect transistors (OFETs) based on polyelectrolyte gate dielectric and electrospun poly(3-hexylthiophene) (P3HT) nanofibers were fabricated on a flexible polymer substrate. The use of UV-crosslinked hydrogel including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a706ece06581e9f3b7d54f9ab590bdf8
https://doi.org/10.1021/nl903722z
https://doi.org/10.1021/nl903722z
Autor:
J.M. Myoung, I.T. Yoon
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:3009-3013
We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1−xMnxN layers (where x≈0.1–0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::581ac53899bf41a108cf042600aeb91d
https://doi.org/10.1016/j.physe.2008.03.010
https://doi.org/10.1016/j.physe.2008.03.010
Autor:
Tae Il Lee, S. P. Ghosh, A Moharana, Kalyan Das, G. Bose, J.M. Myoung, N. Tripathy, Dong Ha Kim, Jyoti Prakash Kar, A Adhikari
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 178:012021
This work mainly focused on the synthesis of copper doped zinc oxide nanowires by hydrothermal method, their characterization and their ultraviolet (UV) light sensing response at room temperature. The structural and morphological characterization was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff3f5fd65ca1ab77c60d34ba8fe817d
https://doi.org/10.1088/1757-899x/178/1/012021
https://doi.org/10.1088/1757-899x/178/1/012021
Autor:
Kalyan Das, S. P. Ghosh, Jyoti Prakash Kar, Dong Ha Kim, N. Tripathy, G. Bose, J.M. Myoung, Tae Il Lee
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 115:012035
ZnO thin films were deposited by using RF sputtering technique at 150W and 4×10-3 mbar pressure. Post-deposition rapid thermal annealing of ZnO thin films were carried out at 1000°C for 600sec. ZnO nanostructures (nanowires/nanorods) were hydrother
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1413e9c8758b9b587cf412f6df004a67
https://doi.org/10.1088/1757-899x/115/1/012035
https://doi.org/10.1088/1757-899x/115/1/012035