Zobrazeno 1 - 10
of 102
pro vyhledávání: '"J.M. McGarrity"'
Autor:
Brett Hull, Akin Akturk, Daniel J. Lichtenwalner, John W. Palmour, Scott Allen, Jim Richmond, David Grider, Thomas Barbieri, J.M. McGarrity
Publikováno v:
Materials Science Forum. 924:559-562
High-energy neutrons produced by cosmic ray interactions with our atmosphere are known to cause single-event burnout (SEB) failure in power devices operating at high fields. We have performed accelerated high-energy neutron SEB testing of SiC and Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75d91335cd3bc4fe2c318cb83a70196
https://doi.org/10.4028/www.scientific.net/msf.924.559
https://doi.org/10.4028/www.scientific.net/msf.924.559
Autor:
Shadi Sabri, Scott H. Allen, Akin Akturk, Edward Van Brunt, Daniel J. Lichtenwalner, Brett Hull, John W. Palmour, Donald A. Gajewski, Dave Grider, J.M. McGarrity
Publikováno v:
IRPS
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation, with high MOS gate oxide field in the on-state, and high drift and termination fields in the blocking state. Moreover, sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd4d9254f5d67f643af3e5481ab17f5
https://doi.org/10.1109/irps.2018.8353544
https://doi.org/10.1109/irps.2018.8353544
Autor:
J.M. McGarrity, Richard Wilkins, Akin Akturk, Dave Grider, Brett Hull, Daniel J. Lichtenwalner, Neil Goldsman
Publikováno v:
IRPS
Terrestrial neutron induced reliability concerns are quantified for silicon carbide (SiC) power MOSFETs and silicon carbide power diodes using the terrestrial neutron simulator at Los Alamos Neutron Science Center. The experiments are used to determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1b8d0a4959900021c1876859cff8097
https://doi.org/10.1109/irps.2018.8353543
https://doi.org/10.1109/irps.2018.8353543
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide (SiC) power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures. The tested SiC powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd000121089b412e16b1f88a7604535
https://doi.org/10.1109/nsrec.2017.8115467
https://doi.org/10.1109/nsrec.2017.8115467
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000144-000151
Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee737f3c6768f262e74191a533164d26
https://doi.org/10.4071/hitec-spotbhare-tp22
https://doi.org/10.4071/hitec-spotbhare-tp22
Autor:
J.M. McGarrity, Neil Goldsman, Stephen K. Powell, Joseph Bernstein, Aivars J. Lelis, Charles Scozzie
Publikováno v:
Journal of Applied Physics. 92:4053-4061
A detailed analysis of silicon-carbide (SiC) metal–oxide–semiconductor field-effect-transistor (MOSFET) physics is performed. Measurements of current–voltage characteristics are taken. A device simulator is developed based on the drift–diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c54c72fc3d4cde26932704f2e45692
https://doi.org/10.1063/1.1499523
https://doi.org/10.1063/1.1499523
Autor:
Neil Goldsman, Mingwei Huang, J.M. McGarrity, Isaak D. Mayergoyz, Dwight L. Woolard, Chien-Hwa Chang
Publikováno v:
Journal of Applied Physics. 84:2065-2070
A two-dimensional numerical device simulator has been developed specially for the recessed gate 4H silicon carbide(4H-SiC) metal–semiconductor field-effect-transistor (MESFET). By combining numerical techniques, material physics, and measured devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f666f6aff7283af77c818807d865fe69
https://doi.org/10.1063/1.368267
https://doi.org/10.1063/1.368267
Autor:
J.M. McGarrity, Charles Scozzie
Publikováno v:
Materials Science Forum. :985-988
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f69e69c3e13498f1550e571d7e4a79
https://doi.org/10.4028/www.scientific.net/msf.264-268.985
https://doi.org/10.4028/www.scientific.net/msf.264-268.985
Publikováno v:
Journal of Applied Physics. 79:545-552
The electrical characteristics of buried‐gate, n‐channel junction‐field‐effect transistors (JFETs) fabricated in epitaxial layers grown on 6H–SiC wafers have been measured as a function of temperature, from 218 to 773 K (−55 to 500 °C).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ab86bec97168f4143b54a5a83af1db
https://doi.org/10.1063/1.360863
https://doi.org/10.1063/1.360863
Publikováno v:
IEEE Transactions on Nuclear Science. 39:1974-1981
Total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2- mu m channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide. Very little effect was observed on device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b825680f5c57fdb7c2f9b5bcb14d65
https://doi.org/10.1109/23.211393
https://doi.org/10.1109/23.211393