Zobrazeno 1 - 10
of 200
pro vyhledávání: '"J.M. Kuo"'
Autor:
P. Pinsukanjana, J.M. Kuo, Daekyu Yu, K. Vargason, Bumman Kim, Kyungho Lee, H. Zhu, Kwangsik Choi, Y.C. Kao
Publikováno v:
Solid-State Electronics. 50:733-740
For many years, HBTs have been vertically and laterally scaled down to improve high-frequency performance. For the very small devices of recent process, some parameters cannot be scaled down properly and an alternative scaling-law is required. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f253f610f5906a0d1f234097a632ead6
https://doi.org/10.1016/j.sse.2006.03.005
https://doi.org/10.1016/j.sse.2006.03.005
Publikováno v:
Journal of Crystal Growth. :362-365
We have fabricated Al 0.48 In 0.52 AsIn 0.53 Ga 0.47 As HEMTs using argon implant isolation with rapid thermal annealing that have device-to-device leakage current similar to that measured for mesa-isolated HEMTs. The argon implant-isolated Al 0.48 I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ceb85df43c2f10494630c80698efaf0
https://doi.org/10.1016/s0022-0248(01)00722-9
https://doi.org/10.1016/s0022-0248(01)00722-9
Autor:
Fan Ren, Jeffrey R. LaRoche, J.M. Kuo, Arthur F. Hebard, Albert G. Baca, S. B. Arnason, Dorota Temple, P. Cheng, Q. Hudspeth, Stephen J. Pearton, Yun Daniel Park
Publikováno v:
Solid-State Electronics. 44:2117-2122
Wet etch processing techniques for InGaAs/InAl/As/InGaAs transistors are used to fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe contacts. These processing techniques can easily be extended for dilute magnetic semiconductor re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c87619faccc66644986c784ab154dd
https://doi.org/10.1016/s0038-1101(00)00143-x
https://doi.org/10.1016/s0038-1101(00)00143-x
Autor:
Hao-Chung Kuo, Fan Ren, W.E. Mayo, J.M. Kuo, Young-Kai Chen, Chun-Hsiung Lin, Huan-Shang Tsai, Yu-Chi Wang, J.R. Lothian, J.S. Weiner
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:1404-1412
In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ high electron-mobility transistors (HEMTs) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Al/sub 0.23/Ga/sub 0.77/As and In/sub 0.5/Ga/sub 0.5/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81ec876f38106d550aa97e036bfd277
https://doi.org/10.1109/22.780387
https://doi.org/10.1109/22.780387
Publikováno v:
Solid-State Electronics. 42:1045-1048
We report a systematic investigation of the Schottky characteristics for the entire aluminum composition of In 0.5 (Al x Ga 1− x ) 0.5 P for the first time, using current–voltage measurements. The n-type Schottky barrier height φ bn has a minimu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7ae59b69918f005aa1ebd740eb02b7
https://doi.org/10.1016/s0038-1101(98)00120-8
https://doi.org/10.1016/s0038-1101(98)00120-8
Akademický článek
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Autor:
Rose Fasano Kopf, Randy J. Shul, D. Johnson, C. Constantine, J. W. Lee, Fan Ren, J.M. Kuo, James Robert Lothian, Steve Pearton
Publikováno v:
Solid-State Electronics. 42:749-753
InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b949ec4be03de02a246b9625035f36
https://doi.org/10.1016/s0038-1101(97)00292-x
https://doi.org/10.1016/s0038-1101(97)00292-x
Autor:
W. Y. Jan, D.B. Buchholz, William E. Mayo, L.M.F. Chirovsky, B.T. Tseng, S.P. Hui, R.A. Novotny, R.L. Morrison, Keith W. Goossen, R.E. Leibenguth, A.L. Lentine, D. Dahringer, Y. C. Wang, D.D. Bacon, John Edward Cunningham, James A. Walker, L.A. D'Asaro, D. Kossives, J.M. Kuo, A. Ron, G. Livescu
Publikováno v:
Journal of Crystal Growth. :971-976
We demonstrate the integration of a large (64 x 68)p-i(MQW)-n GaAs diode array to a silicon CMOS chip, using flip-chip solder bump bonding techniques together with concomitant GaAs substrate removal. The capability of removing a relatively large area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb93782981ff5047153228efa6b173a6
https://doi.org/10.1016/s0022-0248(96)01206-7
https://doi.org/10.1016/s0022-0248(96)01206-7
Autor:
L.A. D'Asaro, B. Tseng, James A. Walker, Keith W. Goossen, D.D. Bacon, D. Dahringer, R.E. Leibenguth, Anthony L. Lentine, John Cunningham, G. Livescu, D.B. Buchholz, R.L. Morrison, S.P. Hui, W. Y. Jan, R. A. Novotny, J.M. Kuo, L.M.F. Chirovsky, D. Kossives
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 2:77-84
We present the first high-speed optoelectronic very large scale integrated circuit (VLSI) switching chip using III-V optical modulators and detectors flip-chip bonded to silicon CMOS. The circuit, which consists of an array of 16/spl times/1 switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d750d14d4d390f20eead31587a71eb94
https://doi.org/10.1109/2944.541876
https://doi.org/10.1109/2944.541876
Publikováno v:
IEEE Electron Device Letters. 24:384-386
InP-based single heterojunction bipolar transistors (SHBTs) for high-speed circuit applications were developed. Typical common emitter DC current gain (/spl beta/) and BV/sub CEO/ were about 17 and 10 V, respectively. Maximum extrapolated f/sub max/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6fb8017c13302f1aac7352f6663089
https://doi.org/10.1109/led.2003.813367
https://doi.org/10.1109/led.2003.813367