Zobrazeno 1 - 10
of 45
pro vyhledávání: '"J.M. Higman"'
Autor:
M. Hackel, Shiuh-Luen Wang, Takahiro Iizuka, Christoph Jungemann, R. Thoma, Philippe Dollfus, Neil Goldsman, F. Dessenne, Xiaolin Wang, Ting-Wei Tang, Kenji Taniguchi, Karl Hess, Yoshinari Kamakura, Masaaki Tomizawa, C. Maziar, H.J. Peifer, S. Ramaswamy, P. Hesto, K. Tomizawa, Akira Yoshii, Chiang-Sheng Yao, Nobuyuki Sano, C. Fiegna, Rossella Brunetti, Tatsuya Kunikiyo, Chihiro Hamaguchi, J. L. Thobel, Antonio Abramo, R. Fauquembergue, R. Castagné, Siegfried Selberherr, Steven E. Laux, Massimo V. Fischetti, K. Hennacy, L. Baudry, P.G. Scrobohaci, Hongchin Lin, M. Charef, Hans Kosina, J.M. Higman, M. Takenaka, H. Mizuno, P. D. Yoder, S. Galdin, W.L. Engl, T. Vogelsang, Robert W. Dutton
Publikováno v:
IEEE Transactions on Electron Devices. 41:1646-1654
In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have
Publikováno v:
Computer Physics Communications. 67:93-104
We briefly review the hot-electron effects which have necessitated the development of accurate solutions of the Boltzmann transport equation. The Monte Carlo particle method of simulating electronic transport in semiconductors is described, with emph
Publikováno v:
IEEE Electron Device Letters. 19:253-255
We reported a new polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory using channel hot electron injection for high-speed programming. For the first time, we demonstrated that source-side injection technique, which is commonly used in
Publikováno v:
Università degli studi di Udine-IRIS
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
Charge leakage from nonvolatile memory floating gates at temperatures below 200/spl deg/C has been observed by many authors. The leakage, which we refer to as low temperature data retention (LTDR), is activated by program/erase (P/E) cycling of a fla
Autor:
Kuo-Tung Chang, Craig T. Swift, J.R. Yeargain, Danny Pak-Chum Shum, J.M. Higman, William J. Taylor, Ko-Min Chang
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
A new low current two-step erasing scheme for "repairing" over-erased flash EEPROM cells has been developed. The cell convergence is achieved with 10 V on the control gate and 5 V on the source and drain for 50 ms. The convergence current is kept to
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
As isotropic model for the silicon band structure which accurately approximates both density of states and group velocity of the real anisotropic band structure and yields excellent agreement with both the collision and nonhomogeneous terms of the Bo
Autor:
M.G. Khazhinsky, Craig T. Swift, Danny Pak-Chum Shum, J.M. Higman, Soolin Kao, J.D. Burnett, K.Y. Wu
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
This paper presents CMP oxide recess with corner field effect in STI technology for high density, sub-0.35 /spl mu/m flash memories. Trench corners with different shape have shown to correlate with CMP recess. We have shown for the first time that no
Autor:
N. Telang, J.M. Higman
Publikováno v:
ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).
A comparison of forward and backward propagation of variance methods is presented, applied to generation of SPICE models that capture the statistical variation of microelectronic devices. MOSFET examples taken directly from a CMOS process are used to
Autor:
M. Orlowski, J.M. Higman
Publikováno v:
31st Annual Proceedings Reliability Physics 1993.
A coupled Monte Carlo/drift diffusion simulation is applied to an n-channel conventional bulk MOSFET and two fully depleted n-channel SOI transitors. It is found that the SOI devices are more sensitive to trapped electron charge. The models, however