Zobrazeno 1 - 10
of 43
pro vyhledávání: '"J.M. Dedulle"'
Autor:
Didier Chaussende, Kanaparin Ariyawong, J.M. Dedulle, Eirini Sarigiannidou, Nikolaos Tsavdaris
Publikováno v:
Crystal Growth & Design. 15:156-163
The nucleation and propagation of foreign polytypes during seeded sublimation growth of silicon carbide is addressed on a macroscopic footing, using a coupled experimental and numerical simulation approach. Experiments are conducted in a contactless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337ca2333c797b92ce91d01a8d3598d4
https://doi.org/10.1021/cg501095b
https://doi.org/10.1021/cg501095b
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩
International audience; We used numerical and analytical modeling to investigate fluid flow behaviors close to the growing 4H-SiC crystal surface in the top seeded solution growth process. First, we calculated the azimuthal and radial components of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddce7a6562a0be708d697714f9ac2e76
https://hal.archives-ouvertes.fr/hal-01456078
https://hal.archives-ouvertes.fr/hal-01456078
Autor:
Didier Chaussende, Kanaparin Ariyawong, J.M. Dedulle, Elisabeth Blanquet, Christian Chatillon
Publikováno v:
CrystEngComm
CrystEngComm, Royal Society of Chemistry, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩
CrystEngComm, Royal Society of Chemistry, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩
International audience; The links between the occurrence of a given silicon carbide (SiC) polytype and crystal growth conditions have been mainly empirically described. Although studies are a little more advanced, a similar description can be applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dbf21b421a3e197a8f35421de4c3c42
https://hal.archives-ouvertes.fr/hal-01366561
https://hal.archives-ouvertes.fr/hal-01366561
Publikováno v:
International Journal of Applied Electromagnetics and Mechanics. 37:173-180
This study deals with the optimization of a cold crucible melter where electric currents are directly induced in a glass charge. Designs of experiments are used to determine the factors of the crucible design which have an impact on the efficiency, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::260121c3f514dc7c4843cf0de461fd63
https://doi.org/10.3233/jae-2011-1388
https://doi.org/10.3233/jae-2011-1388
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2010, 312 (2), pp.155-163
Journal of Crystal Growth, Elsevier, 2010, 312 (2), pp.155-163
International audience; Despite its real advantages compared to seeded sublimation growth, SiC solution growth has never given convincing results. The difficulty of stabilizing the growth front, and thus avoiding any polycrystal formation results fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74b825c6ee68f253dcc244b93f49f3f6
https://doi.org/10.1016/j.jcrysgro.2009.10.007
https://doi.org/10.1016/j.jcrysgro.2009.10.007
Autor:
Roland Madar, Michail Anikin, Lea Di Cioccio, Jérôme Meziere, Michel Pons, Etienne Pernot, Thierry Billon, Francis Baillet, J.M. Dedulle, Pierre Ferret, Elisabeth Blanquet
Publikováno v:
Journal of Physics: Condensed Matter. 16:S1579-S1595
High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d8851a4ecd7ae3637682cba2c40e1e
https://doi.org/10.1088/0953-8984/16/17/009
https://doi.org/10.1088/0953-8984/16/17/009
Autor:
Michel Pons, Y Grange, C Faure, J.M. Dedulle, Jean-Marie Bluet, Elisabeth Blanquet, M Anikin, P Grosse, K Chourou, Claude Bernard, Roland Madar, G Basset
Publikováno v:
Materials Science and Engineering: B. :82-85
The influence of the temperature and its gradient on powder features and defect formation is discussed in the light of experimental results in the physical vapour transport process. The recrystallization of the source powder during crystal growth app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44d6d2d75af44b3f18fc46c953d8c270
https://doi.org/10.1016/s0921-5107(98)00450-4
https://doi.org/10.1016/s0921-5107(98)00450-4
Autor:
P Grosse, M Anikin, Claude Bernard, Roland Madar, G Basset, K Chourou, C Faure, Alexander Pisch, Michel Pons, J.M. Dedulle, Elisabeth Blanquet, Y Grange
Publikováno v:
Scopus-Elsevier
Different computational tools have helped to provide additional information on the sublimation growth of SiC single crystals by the modified-Lely method. The modelling work was motivated by the need of a better control of the local temperature field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5542c9e3fc2624dd1736c38f194f4e69
https://doi.org/10.1016/s0921-5107(98)00439-5
https://doi.org/10.1016/s0921-5107(98)00439-5
Autor:
Roland Madar, Michel Pons, J.M. Dedulle, M Anikin, Elisabeth Blanquet, Claude Bernard, K Chourou
Publikováno v:
Surface and Coatings Technology. :279-284
The deposition of single SiC crystals has been processed inside a sealed enclosure at temperatures above 2300 K and pressures lower than 5 × 103 Pa by the modified Lely method. The purpose of this work is to present different optimized macroscopic m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c8abe20480c783ccb27df82e184988
https://doi.org/10.1016/s0257-8972(97)00339-3
https://doi.org/10.1016/s0257-8972(97)00339-3
Publikováno v:
Materials Science and Engineering: B. 46:308-312
Different macroscopic models such as thermodynamics, heat transfer and mass transport have been applied to the simulation of the growth of single SiC crystals prepared according to the so-called ‘modified Lely method’. Thermodynamic modelling has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb632febfe334569ccc96c5bb3c1f230
https://doi.org/10.1016/s0921-5107(96)01995-2
https://doi.org/10.1016/s0921-5107(96)01995-2