Zobrazeno 1 - 10
of 218
pro vyhledávání: '"J.M. Albella"'
Publikováno v:
In Thin Solid Films 2008 516(18):6524-6530
Publikováno v:
TrAC Trends in Analytical Chemistry. 28:494-505
We examine here the depth resolution (interface width) in elemental analysis and depth profiling of complex layer systems of three ion-probing techniques, each of which has pros and cons: • Rutherford backscattering spectrometry (RBS); • secondar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3f4b0d4e00eaf29e1b1046bf350b34
https://doi.org/10.1016/j.trac.2009.01.004
https://doi.org/10.1016/j.trac.2009.01.004
Publikováno v:
Thin Solid Films. 516:6524-6530
Elemental in-depth analysis of the Y–Pd thin film under hydrogenation/dehydrogenation has been performed by Glow Discharge Optical Emission Spectroscopy (GDOES). This technique was able to detect qualitatively the changes in the composition of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::432909a320f1582c2d14941d79287941
https://doi.org/10.1016/j.tsf.2008.03.002
https://doi.org/10.1016/j.tsf.2008.03.002
Publikováno v:
Solar Energy Materials and Solar Cells. 87:583-593
Light reflectance patterns in chemically textured (1 0 0)Si wafers exhibit 4-fold symmetry with intensity maxima at well-defined off centre angular positions. The relation between the light pattern and the geometrical features of the texture is discu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066a1ec519f70f4b46daaab0a8a0e7f4
https://doi.org/10.1016/j.solmat.2004.07.040
https://doi.org/10.1016/j.solmat.2004.07.040
Publikováno v:
Applied Surface Science. 173:290-295
TiN thin films have been deposited on silicon wafers by electron beam evaporation of Ti with simultaneous assistance of nitrogen ion bombardment (IBAD technique). In order to reduce the oxygen incorporation in the films, a Ti pre-evaporation was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb31c0049e3e3e4cc06697103ab7f75
https://doi.org/10.1016/s0169-4332(00)00912-0
https://doi.org/10.1016/s0169-4332(00)00912-0
Publikováno v:
Surface and Interface Analysis. 25:94-98
Modifications in the structure and composition of anodic silicon oxide film during the dielectric breakdown process have been studied by infrared spectroscopy (IR) and XPS. Before breakdown, the IR spectrum of the anodic silicon oxide film shows the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a114105ac56e989be5d42f11114f2a5
https://doi.org/10.1002/(sici)1096-9918(199702)25:2<94::aid-sia193>3.0.co
https://doi.org/10.1002/(sici)1096-9918(199702)25:2<94::aid-sia193>3.0.co
Autor:
C. Gómez-Aleixandre, J. Sánchez Olías, Juan Jiménez, M.M.García Poza, A. Blanco Montes, M. Hernández Vélez, J.M. Albella
Publikováno v:
Materials Letters. 29:111-115
Diamond films deposited by MWCVD (microwave assisted chemical vapor deposition) after bias enhanced nucleation have been characterized by Raman spectroscopy (RS), scanning electron microscopy (SEM) and electric measurements. The diamond/graphite rati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f689d8e942fef3d3f6af3ba152312c4
https://doi.org/10.1016/s0167-577x(96)00126-7
https://doi.org/10.1016/s0167-577x(96)00126-7
Publikováno v:
Scripta Metallurgica et Materialia. 31:1103-1108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17677f49f71d0e7ff3da751e84de081b
https://doi.org/10.1016/0956-716x(94)90534-7
https://doi.org/10.1016/0956-716x(94)90534-7
Publikováno v:
Diamond and Related Materials. 3:715-719
The morphology of diamond films grown on silicon substrates by the chemical vapor deposition method has been studied by scanning tunneling microscopy (STM). STM images reveal isolated crystals grown on a faceted granular structure for 15 min depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7713911bb64d977e0e82eb4848ea0bf7
https://doi.org/10.1016/0925-9635(94)90255-0
https://doi.org/10.1016/0925-9635(94)90255-0
Publikováno v:
Applied Surface Science. :475-478
TiN films have been deposited on Si substrates by reactive sputtering in order to study their barrier characteristics against aluminum-silicon interdiffusion. After Al metallization, annealing treatments at temperatures ranging from 350 to 450°C wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a964eb5a629606ab3a8a9a5720368d
https://doi.org/10.1016/0169-4332(93)90564-r
https://doi.org/10.1016/0169-4332(93)90564-r