Zobrazeno 1 - 10
of 87
pro vyhledávání: '"J.L. Zilko"'
Publikováno v:
Journal of Crystal Growth. 225:391-396
Low pressure metal-organic vapor phase epitaxy (MOVPE) is the dominant technology for the fabrication of transmitters and detectors for the fiber optic communication industry. These high bandwidth devices typically utilize heterostructure designs inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21eb355991b3b6b711db8bd78b1f6883
https://doi.org/10.1016/s0022-0248(01)00891-0
https://doi.org/10.1016/s0022-0248(01)00891-0
Autor:
K. Feder, Mark S. Hybertsen, J.M. Vandenberg, B.S. Falk, K. Evans-Lutterodt, Roosevelt People, John Michael Geary, Muhammad A. Alam, M.W. Focht, R.E. Leibenguth, Theo Siegrist, S.K. Sputz, J. Sheridan-Eng, G.J. Przybyiek, F.S. Walters, J.A. Grenko, L. E. Smith, J. Levkoff, K.G. Glogovsky, L.C. Luther, Michael Geva, D.M. Tennant, D. V. Stampone, S. Shunk, N.N. Tzafaras, L.J. Peticolas, L.J.P. Ketelsen, D.M. Romero, S. N. G. Chu, J.E. Johnson, J.L. Zilko, J.L. Lentz, T.L. Pernell, Joseph Michael Freund, E. D. Isaacs, Liming Zhang, W.A. Gault, C.L. Reynolds
Publikováno v:
IEEE Journal of Quantum Electronics. 36:641-648
We describe the design, fabrication, and performance of a five-element quarterwave-shifted distributed feedback laser array with monolithically integrated spot size converters intended for use as a multiple-wavelength source in dense wavelength-divis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827719dc6e70de0e798f899d38116719
https://doi.org/10.1109/3.845717
https://doi.org/10.1109/3.845717
Autor:
R.E. Leibenguth, H.A. Aispain, B.H. Tyrone, W.J. Parzygnat, M.W. Focht, J.V. Gates, R.J.S. Bates, C.C. Faudskar, S.F. Nati, S.G. Walker, D.J. Muehlner, K.G. Glogovsky, T.J. Ireland, Daniel M. Kuchta, P.J. Anthony, D.H. Lewis, R.A. Morgan, T. Mullally, J.L. Brandner, G. Guth, David K. Lewis, Yiu-Man Wong, D.F. Smith, Young H. Kwark, J.L. Zilko, John D. Crow, M. Fishteyn, Dennis L. Rogers, S. Gowda, D.B. Buchholz
Publikováno v:
Journal of Lightwave Technology. 13:995-1016
A parallel, 32-channel, high density (140 /spl mu/m pitch), 500 Mb/s NRZ, point-to-point, optical data link has been fabricated using existing GaAs IC, silicon optical bench (SiOB), and multichip module (MCM-D) technologies. The main components of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5fe56ea40d4028253d1c82a6d4b36b
https://doi.org/10.1109/50.390217
https://doi.org/10.1109/50.390217
Autor:
J. Cheng, Kevin L. Lear, Gregory A. Vawter, John C. Zolper, A.C. Adams, Ronald E. Leibenguth, Yin-Chen Lu, Bo Lu, J.L. Zilko, Ping Zhou, S.A. Chalmers
Publikováno v:
IEEE Photonics Technology Letters. 6:398-401
Optical switches based on GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are combined monolithically into new switching configurations that perform optical logic and spatial routing in a dynamically programmab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1944d20761adccb108e98bcd12cdb6f
https://doi.org/10.1109/68.275499
https://doi.org/10.1109/68.275499
Autor:
Gregory A. Vawter, Kevin L. Lear, R.E. Leibenguth, S.A. Chalmers, A.C. Adams, J. Cheng, J.L. Zilko, Ping Zhou, Yin-Chen Lu, Bo Lu, John C. Zolper
Publikováno v:
IEEE Photonics Technology Letters. 6:222-226
The design, fabrication, and experimental demonstration of dynamically reconfigurable binary optical switches based on the integration of GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are reported. These new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ba1f021e242f93bc52d9fd284c071a
https://doi.org/10.1109/68.275433
https://doi.org/10.1109/68.275433
Autor:
John Michael Geary, K.G. Glogovsky, D.J. Muehlner, Mark S. Hybertsen, J.A. Grenko, J.E. Johnson, I.J.P. Ketelsen, W.A. Gault, M.W. Focht, J.V. Gates, E.J. Laskowski, L.T. Gomez, C.L. Reynolds, M.F. Dautartas, J. M. Vandenberg, S.K. Sputz, S. N. G. Chu, J.L. Zilko, Mark Cappuzzo
Publikováno v:
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
We have demonstrated an electroabsorption-modulated hybrid integrated wavelength selectable laser source comprised of a spot-size converted 1.55 /spl mu/m DFB laser array and a spot-size converted semiconductor optical amplifier/EA modulator, mounted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a4c7de1f73f1681ce11bbd2d2fee66
https://doi.org/10.1109/leos.1999.811927
https://doi.org/10.1109/leos.1999.811927
Autor:
Julian Cheng, Ronald E. Leibenguth, S.A. Chalmers, John C. Zolper, A.C. Adams, Kevin L. Lear, Ping Zhou, Gregory A. Vawter, J.L. Zilko
Publikováno v:
Proceedings of LEOS '93.
Monolithic arrays of optical switches based on the integration of GaAs vertical cavity surface-emitting lasers (VCSELs) with heterojunction phototransistors form a flexible two-dimensional switching fabric that is useful for a variety of applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182a7afdbbb6afb739a19611e7433a0d
https://doi.org/10.1109/leos.1993.379275
https://doi.org/10.1109/leos.1993.379275
Publikováno v:
Journal of Crystal Growth. 112:597-599
We have detected arsine with a toxic gas monitoring system during opening of an ultra high vacuum solid source molecular beam epitaxial system. The measured arsine concentration was in excess of 150 ppb. Our results are explained in terms of higher r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0168d2878387f2f9d95426793c30af02
https://doi.org/10.1016/0022-0248(91)90341-2
https://doi.org/10.1016/0022-0248(91)90341-2
Autor:
S. A. Chalmers, Gregory A. Vawter, J.C. Zolper, Ping Zhou, J.L. Zilko, Julian Cheng, R. E. Leibenguth, K. L. Lear, Yin-Chen Lu, Bo Lu, A.C. Adams
Publikováno v:
Integrated Photonics Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c0513283da07b4e923fe8770433b8e
https://doi.org/10.1364/ipr.1994.ff4
https://doi.org/10.1364/ipr.1994.ff4
Publikováno v:
IEEE Electron Device Letters. 2:46-49
In p-n junctions grown by LPE in the (Al,Ga)As system, high concentrations of Sulfur can accumulate on the p side of the junction. As a result, a closely compensated, high resistivity region can extend for 0.1-1.0 µm into the p layer. Since sulfur c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482a043e4017d060862777f9e6422493
https://doi.org/10.1109/edl.1981.25335
https://doi.org/10.1109/edl.1981.25335