Zobrazeno 1 - 10
of 396
pro vyhledávání: '"J.L. Merz"'
Publikováno v:
Физика и техника полупроводников. 52:478
AbstractWe used a low temperature near-field scanning optical microscopy (NSOM) to study a formation of Wigner molecules (WMs) in the emission spectra of self-organized InP/GaInP QDs having up to seven electrons. We used a Schottky diode structure fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ea87a10bd8287bce208fef33280db7
https://doi.org/10.21883/ftp.2018.04.45827.16
https://doi.org/10.21883/ftp.2018.04.45827.16
Publikováno v:
Solid State Communications. 100:763-767
We studied magneto-optical properties of ultra-thin InAs GaAs heterostructures deposited on GaAs (311)A surfaces. Sharp heavy- and light-hole exciton resonances, as well as the features due to exciton excited states are observed in photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b038004fa84f33d9832db42a28ca3708
https://doi.org/10.1016/s0038-1098(96)00497-8
https://doi.org/10.1016/s0038-1098(96)00497-8
Publikováno v:
Solid State Electronics, 37, 919-922
Solid State Electronics, 37, 4-6, pp. 919-922
Solid State Electronics, 37, 4-6, pp. 919-922
Dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum well structures have been studied with magnetoluminescence at 2 K. An electron-sheet-concentration ( n s )-dependent band-gap renormalization is measured in the magnetic field. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4df25e02eea665171c527b5c2902ee3
https://doi.org/10.1016/0038-1101(94)90326-3
https://doi.org/10.1016/0038-1101(94)90326-3
Autor:
J.L. Merz, Pierre Petroff
Publikováno v:
Materials Science and Engineering: B. 9:275-284
This paper will review current techniques used to fabricate low dimensional quantum structures for optoelectronic applications. Work has included the fabrication of quantum wire structures using molecular beam epitaxy (MBE) growth of tilted superlatt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab17719e98796524114e8c64891a72f6
https://doi.org/10.1016/0921-5107(91)90186-y
https://doi.org/10.1016/0921-5107(91)90186-y
Publikováno v:
[1991] 49th Annual Device Research Conference Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b2ffd12923a554ed9e0f5fef277971
https://doi.org/10.1109/drc.1991.664669
https://doi.org/10.1109/drc.1991.664669
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866f71eb5f63e19e04ebd82a17967d5f
https://doi.org/10.1109/leosst.1991.639026
https://doi.org/10.1109/leosst.1991.639026
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0385baced2f5a503721b6dfa51b5a418
https://doi.org/10.1109/islc.1992.763653
https://doi.org/10.1109/islc.1992.763653
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e13c9689bbd10d94e5091979ec79ba78
https://doi.org/10.1109/leosst.1992.697456
https://doi.org/10.1109/leosst.1992.697456
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2dd26a7a10053a8692731a9cf6e1392
https://doi.org/10.1109/leosst.1992.697401
https://doi.org/10.1109/leosst.1992.697401
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df545beb4549f07359629a6814ea7a81
https://doi.org/10.1109/leosst.1991.639018
https://doi.org/10.1109/leosst.1991.639018