Influence of thickness on the structural, optical and electrical properties of Ga-doped ZnO thin films deposited by sputtering magnetron

Autor: K. Djessas, S. Alaya, J.L. Gauffier, H. Mahdhi, Z. Ben Ayadi

Publikováno v: Journal of Alloys and Compounds. 695:697-703

In the present work, we have deposited Ga-doped ZnO (GZO) thin films by magnetron sputtering technique using nanocrystalline particles elaborated by sol–gel method as a target material. The effect of the thickness, on the physical properties of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7bca581bd905cd49966515a9d43b17d5
https://doi.org/10.1016/j.jallcom.2016.11.117

Dielectric and modulus analysis of the photoabsorber Cu2SnS3

Autor: B. Viallet, S. Cayez, M. Belaqziz, K. Djessas, Lahcen Essaleh, A. Alimoussa, S. Lahlali, J.L. Gauffier, H. Chehouani

Publikováno v: Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 2017, 526, pp.54-58
Physica B: Condensed Matter, 2017, 526, pp.54-58

Dielectric properties of the ternary semiconductor compound Cu 2 SnS 3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant e ′ and dielectric loss tan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b7cdc74a10f57899145d39eaa865969
https://hal.insa-toulouse.fr/hal-02049178

Influence of sputtering power on the properties of thin layers of GZO for photovoltaic applications

Autor: K. Djessas, H. Mahdhi, J.L. Gauffier, Z. Ben Ayadi, S. Alaya

Publikováno v: Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2015, 26 (5), pp.3336-3343. ⟨10.1007/s10854-015-2836-3⟩
Journal of Materials Science: Materials in Electronics, 2015, 26 (5), pp.3336-3343. ⟨10.1007/s10854-015-2836-3⟩

International audience; In the present work, we have deposited gallium doped zinc oxide thin films by magnetron sputtering technique based nanocrystalline particles elaborated by sol–gel method. In the first step, the nanoparticles were synthesized

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d395839c2f72692c9fd5ed42048a28c
https://doi.org/10.1007/s10854-015-2836-3

Sputtered Al-doped ZnO transparent conducting thin films suitable for silicon solar cells

Autor: Z. Ben Ayadi, S. Alaya, H. Mahdhi, L. El Mir, K. Djessas, J.L. Gauffier

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2014, 553, pp.123-126. ⟨10.1016/j.tsf.2013.11.120⟩
Thin Solid Films, 2014, 553, pp.123-126. ⟨10.1016/j.tsf.2013.11.120⟩

International audience; Highly transparent conducting Al-doped zinc oxide (AZO) thin films have been grown onto p-type porous silicon substrates by RF-magnetron sputtering at room temperature using aluminum doped nanocrystalline powder. The obtained

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49578c6c2b84e2da517f09d92457c138
https://doi.org/10.1016/j.tsf.2013.11.120

Growth of nanostructured thin films of Zn1−xVxO using rf-magnetron sputtering with low and high vanadium loading: Physico-chemical characterization, optical and electrical properties evaluation

Autor: J.L. Gauffier, K. Medjnoun, Lahcen Essaleh, K. Djessas, S.E. Grillo, A. Solhy, H. Chehouani

Publikováno v: 2016 International Renewable and Sustainable Energy Conference (IRSEC).

The present study reports on the structural, morphological, optical and electrical properties of Zn 1−x V x O (0 ≥ x ≥ 0.30) thin films. These films of ∼ 200 to 240 nm thickness with low and high vanadium loading, were grown by rf-magnetron s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e27384c2b7ea53e5574563705e359fc
https://doi.org/10.1109/irsec.2016.7984080