Zobrazeno 1 - 10
of 368
pro vyhledávání: '"J.L. FREEOUF"'
Autor:
J.L. Freeouf, M. Wittmer
Publikováno v:
Physics Letters A. 173:190-194
The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-intera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98967dc8b958e413aaf8ef1fcabe75df
https://doi.org/10.1016/0375-9601(93)90185-3
https://doi.org/10.1016/0375-9601(93)90185-3
Autor:
J.L. Freeouf
Publikováno v:
Applied Surface Science. :323-328
Spectroscopic ellipsometry provides non-contact, non-destructive characterization with multi-layer composition-, strain-, and thickness-sensitivity. Modern computer technology readily permits the extensive computer analysis required to extract the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa8a7220199c56165c2e4a0212b6302
https://doi.org/10.1016/0169-4332(89)90079-2
https://doi.org/10.1016/0169-4332(89)90079-2
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
Silicon-on-insulator (SOI) is very promising for submicron CMOS due to low parasitic capacitance, higher potential speed, and ease of isolation. The major requirements for the starting material are: 1) thin Si layers, 2) low active defect densities,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39288025246eee2264688026532f0bcf
https://doi.org/10.1109/soi.1993.344602
https://doi.org/10.1109/soi.1993.344602
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdb285f90b627f707ad9be4493d5e61
https://doi.org/10.1109/soi.1993.344610
https://doi.org/10.1109/soi.1993.344610
Autor:
J.L. Freeouf, S.T. Liu
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
SOI technology is based upon the difficult process of fabricating thin silicon films on an insulating layer. This thin silicon layer is the active layer of the device, but it is difficult to obtain electrical characterization of this layer. We are te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de417054665b3a160e09f912c489aaf8
https://doi.org/10.1109/soi.1995.526467
https://doi.org/10.1109/soi.1995.526467
The optical constants {epsilon}(E)[{equals}{epsilon}{sub 1}(E) + i{epsilon}{sub 2}(E)] of single crystal GaSb at 300K have been measured using spectral ellipsometry in the range of 0.3--5.3 eV. The {epsilon}(E) spectra displayed distinct structures a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a65643f70e9a2e28a58f39a6473072
https://doi.org/10.2172/754915
https://doi.org/10.2172/754915
Publikováno v:
Solid State Communications. 44:1547-1550
The first angular dependent photoemission studies of the semimagnetic semiconductor Cd 1−x Mn x Te are reported. These studies provide no evidence for the commonly assumed presence of a highly localized 3d 5 ground state, but rather indicate strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3028f7d7a610f5f460ccda903205bbcd
https://doi.org/10.1016/0038-1098(82)90675-5
https://doi.org/10.1016/0038-1098(82)90675-5
Publikováno v:
Solid State Communications. 17:391-396
We have measured the photoemission spectra both for CO adsorbed on Ni and Pd films and for gas phase CO over a wide photon energy range. The comparison of these two sets of measurements lead to the following interpretation of the two observed electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f49b6f1ad3da4c786713d1305133cb1a
https://doi.org/10.1016/0038-1098(75)90318-x
https://doi.org/10.1016/0038-1098(75)90318-x
Autor:
J.L. Freeouf
Publikováno v:
Solid State Communications. 33:1059-1061
A model for reactive Schottky barrier formation is proposed and applied to silicide contacts on silicon. Approximate workfunctions calculated assuming a silicon excess near the silicide/silicon interface reconcile measured barrier heights with a simp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd83f11584bdce4ab1037ed4541004f
https://doi.org/10.1016/0038-1098(80)90317-8
https://doi.org/10.1016/0038-1098(80)90317-8