Zobrazeno 1 - 10
of 137
pro vyhledávání: '"J.L. Cazaux"'
Autor:
David Dubuc, D. De Conto, J.L. Muraro, Robert Plana, Katia Grenier, Olivier Vendier, J.L. Cazaux, S. Melle
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:3482-3488
The kinetic of dielectric charging in capacitive RF microelectromechanical systems (RF MEMS) is investigated using an original method of stress and monitoring. This effect is investigated through a new parameter: the shift rate of the actuation volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7affa685e531140a7cc885aa084ad50
https://doi.org/10.1109/tmtt.2005.857109
https://doi.org/10.1109/tmtt.2005.857109
Autor:
D. De Conto, J.L. Muraro, J.L. Cazaux, C. Bordas, David Dubuc, Robert Plana, Laurent Bary, S. Melle, B. Poussard, Katia Grenier, Olivier Vendier, Laurent Mazenq
Publikováno v:
Microelectronics Reliability. 45:1770-1775
This paper reports on the investigation of the failure mechanism in capacitive RF-MEMS through an efficient analysis methodology. We demonstrate that the physical origin of the dielectric charging is the leakage current through the RF-MEMS dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9731f859b4d3876b23ffb9187d3288
https://doi.org/10.1016/j.microrel.2005.07.092
https://doi.org/10.1016/j.microrel.2005.07.092
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 52:1606-1610
This paper addresses a new experimental test set designed for on-wafer noise characterization of active two-port amplifiers in the Ka-band. We report on noise parameters obtained from the multiple impedance noise measurement technique on several micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a2a191e973766206346e094f2f3250
https://doi.org/10.1109/tim.2003.817156
https://doi.org/10.1109/tim.2003.817156
Publikováno v:
Microelectronics Reliability. 37:1687-1690
GaAs MMICs dedicated to space telecommunication payloads have now to work under high speed switching conditions together with the classical continuous microwave operation. Thus, both microwave and ⪡digital-relatedd⪢ limitations of these MMICs hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852257e8f891c49ccbfaa5db25fdc1a3
https://doi.org/10.1016/s0026-2714(97)00140-6
https://doi.org/10.1016/s0026-2714(97)00140-6
Autor:
B. Guillon, Katia Grenier, Patrick Pons, J.C. Lalaurie, Robert Plana, J.L. Cazaux, Dominique Cros
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:743-745
We present in this article a very low loss silicon micromachined coplanar technology. The design of the structures was achieved through three dimensional finite element method electromagnetic simulations. A silicon micromachined cavity resonating at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3718ff7bcd7b18a953085dd18abb64d5
https://doi.org/10.1116/1.582170
https://doi.org/10.1116/1.582170
PRIME 2007 High quality medium power RF-MEMS based impedance tuner for smart microsystem integration
Publikováno v:
2007 Ph.D Research in Microelectronics and Electronics Conference.
This paper presents the design and fabrication of an impedance tuner integrated thanks an RF-MEMS technology which is fully compatible with IC. The developed technology aims to fabricate RF-MEMS devices which are able to handle medium RF-power and al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18724bde35bd64b2f218215576e82c9
https://doi.org/10.1109/rme.2007.4401812
https://doi.org/10.1109/rme.2007.4401812
Publikováno v:
2007 Ph.D Research in Microelectronics and Electronics Conference.
Based on carrier to third intermodulation ratio (C/I3), reverse engineering of a two stages low level amplifier has been made in order to access the current transistor nonlinear models. Comparisons between two models of HEMT have been performed in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8035b7e3e0083c8e1b8ac21cf319c19d
https://doi.org/10.1109/rme.2007.4401834
https://doi.org/10.1109/rme.2007.4401834
Autor:
J.L. Cazaux, David Dubuc, Katia Grenier, Sébastien Pacchini, C. Bordas, M. Paillard, Emmanuel Flahaut
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
This paper presents the fabrication and experimental results of capacitive MEM switches with a carbon nanotubes (CNT) based dielectric for the first time to our knowledge. Double wall nanotubes (DWNT) have been incorporated in the switch silicon nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d154ad809ab7ab46275c06a91a5ad3
https://doi.org/10.1109/mwsym.2007.380449
https://doi.org/10.1109/mwsym.2007.380449
Publikováno v:
2007 European Microwave Conference.
One of the most stringent specification in modern microwave equipment is the control of spurious levels. This is a daily concern for microwave engineers designing telecommunication or observation space-borne equipment. AAS- F has studied and develope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfb63f2c89197f2efa8ffc5f38d9eda
https://doi.org/10.1109/eumc.2007.4405125
https://doi.org/10.1109/eumc.2007.4405125
Autor:
J.F. Villemazet, Claude Drevon, J.L. Muraro, Olivier Vendier, C. Schaffauser, J.L. Cazaux, S. Forestier
Publikováno v:
2006 Asia-Pacific Microwave Conference.
On the very last months, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics with the announcement of commercially available power transistors. Those striking news follow several publicized results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024793f0d0d7c048826e0d7452a0a79b
https://doi.org/10.1109/apmc.2006.4429584
https://doi.org/10.1109/apmc.2006.4429584