Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J.K. Arch"'
Publikováno v:
Solar Energy Materials and Solar Cells. 45:309-322
Although silicon solar cells based on layers less than 50 μm thick have become very popular, little attention has been paid to the role of the underlying silicon substrate. This treatment uses the device simulation program PC-1D and the ray tracing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ca6cffa65c71f4ecefd93567b1f341
https://doi.org/10.1016/s0927-0248(96)00074-8
https://doi.org/10.1016/s0927-0248(96)00074-8
Publikováno v:
Solar Energy Materials and Solar Cells. 29:387-396
We use variable temperature Hall effect measurements to determine the doping concentration, impurity compensation, and mobility of n- and p-type liquid phase epitaxy (LPE) silicon layers that are grown from indium solutions onto silicon substrates. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::119f507bd82b85f55fc6e161a7bd592b
https://doi.org/10.1016/0927-0248(93)90097-m
https://doi.org/10.1016/0927-0248(93)90097-m
Publikováno v:
Solar Energy Materials and Solar Cells. 28:285-292
The internal quantum efficiencies of intrinsic hydrogenated amorphous silicon (a-Si:H) Schottky barrier solar cell structures have been used to determine the effects of the metal/a-Si:H contact on the collection of photogenerated carriers. The result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d79cc533ea7f034d05269a58ec2c73
https://doi.org/10.1016/0927-0248(92)90036-o
https://doi.org/10.1016/0927-0248(92)90036-o
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
The development of the Spheral Solar Technology in the past has focused on utilizing metallurgical grade silicon (MG-Si) to grow crystalline silicon spheres and bonding these into aluminum foil to form a flexible solar cell. The process for growing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b60e64230590bb1c0dcad59fb07c51
https://doi.org/10.1109/wcpec.1994.520523
https://doi.org/10.1109/wcpec.1994.520523
Autor:
J.K. Arch, Mowafak Al-Jassim, J.S. Reynolds, R. K. Ahrenkiel, Sally Asher, K.M. Jones, M.D. Hammerbacher
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
This paper discusses the accomplishments of a Cooperative Research and Development Agreement between Texas Instruments and the National Renewable Energy Laboratory (NREL). Secondary ion mass spectrometry (SIMS) has showed the predicted reduction in i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ad99b7e36efdca5b996e57ff8c1d20
https://doi.org/10.1109/wcpec.1994.520200
https://doi.org/10.1109/wcpec.1994.520200
Autor:
Alan E. Delahoy, X.R. Li, Sigurd Wagner, J.L. Nicque, M. Bennett, Xiantao Li, X. Xu, J.K. Arch, M. Isomura, Stephen J. Fonash, D. S. Shen
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
Pin solar cells were aged under high-intensity illumination at 60 degrees C, well into saturation of their conversion efficiency. The cell characteristics were measured at intervals and were modeled numerically with a quantitative optoelectronic mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d0e608990a88d5f9b23be737b7d21f
https://doi.org/10.1109/pvsc.1991.169419
https://doi.org/10.1109/pvsc.1991.169419
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The first-principles computer model AMPS is used to model multijunction solar cell performance. The specific cell modeled uses two a-Si:H absorber layers and an a-SiGe:H absorber layer with all a-SiC:H p/sup +/ layers and all a-Si:H n/sup +/ layers,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::947b7acda72e3b4ad010c480ebf049c7
https://doi.org/10.1109/pvsc.1991.169410
https://doi.org/10.1109/pvsc.1991.169410
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
Internal photoemission of both electrons and holes was used to investigate the movement of mobility edges in a-Si:H. Shifts of the electron mobility edges were observed with changes in the optical gap, E/sub opt/ due to temperature and incorporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d60607bfd94c2f7cec13aff6c58feca
https://doi.org/10.1109/pvsc.1990.111884
https://doi.org/10.1109/pvsc.1990.111884
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The performance of a-Si:H p-i-n solar cells with different p-layer thicknesses, front contact barrier heights, and front contact/p-layer hole transport mechanisms were modeled. The authors examined how p-layer material and contact quality influenced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec1855f7e6d5ad37cee28bb031c3eec
https://doi.org/10.1109/pvsc.1990.111886
https://doi.org/10.1109/pvsc.1990.111886
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
A computer-model study is used to investigate the effects of the distribution of the bandgap discontinuity in a-SiC:H/a-Si:H heterojunction p-i-n solar cells. It is found that the influence of the energy location of the p-layer/i-layer bandgap discon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5b870dc057538644d69b41a093a6709
https://doi.org/10.1109/pvsc.1990.111865
https://doi.org/10.1109/pvsc.1990.111865