Zobrazeno 1 - 10
of 176
pro vyhledávání: '"J.J. Wortman"'
Autor:
D.M. Maher, Mehmet C. Öztürk, J.R. Hauser, J.J. Wortman, N. A. Masnari, R.J. Markunas, Gerald Lucovsky
Publikováno v:
Proceedings of the IEEE. 81:42-59
Microelectronics manufacturing technology is rapidly moving toward integrated circuits with submicron minimum feature sizes. This is being driven by the development of devices and circuits with reduced device lateral dimensions, increased density per
Publikováno v:
51st Annual Device Research Conference.
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
This work examines different components of direct tunneling currents and analyzes the oxide reliability in scaled NMOSFETs with ultrathin gate oxides (1.4-2 nm). It concludes that the source/drain extension to the gate overlap regions have strong eff
Publikováno v:
Images of the Twenty-First Century. Proceedings of the Annual International Engineering in Medicine and Biology Society.
The manufacture of a three-dimensional, silicon-based, high-density electrode array with potential biomedical applications is described. Microelectronic fabrication techniques are used to produce an array of regularly spaced electrodes with sensing s
Autor:
J.T. McGuire, J.J. Wortman, B. J. Shemanski, M.A. George, G.A. Hames, David Arthur Bohling, W.A. Lanford, Scott Edward Beck
Publikováno v:
Proceedings of 1994 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC).
The effects of different levels of water, nitrogen, and methane contamination in an oxidation ambient during the production of ultra-thin rapid thermal oxides have been investigated. Careful characterization of the oxidation and argon anneal steps ha
Publikováno v:
Materials Letters. 4:461-464
A new approach for bonding two silicon wafers together is described. This approach includes an electrostatic adhering followed by a rapid thermal bonding (RTB) process. The electrostatic adhering of the wafer pair is achieved by applying a small volt
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :265-272
Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore requi
Publikováno v:
Solid-State Electronics. 13:1519-1526
The thermal generation rate of charge carriers in a depletion region in gold-doped silicon was measured as a function of strain applied in the [110] direction over a range of temperatures. Thermal generation rate was also measured as a function of [1
Autor:
L. K. Monteith, J.J. Wortman
Publikováno v:
Solid-State Electronics. 16:229-237
This paper is concerned with the influence of time varying mechanical stress on the electrical properties of p-n junctions. A strain generator based upon a vibrating cantilever beam is described. Data obtained on silicon junctions are presented and c
Autor:
J.J. Wortman, L. K. Monteith
Publikováno v:
IEEE Transactions on Electron Devices. 16:855-860
The purpose of this paper is to briefly review the concepts proposed to explain the piezojunction effect and to describe the techniques employed in its application. Several experimental transducers which have been constructed and evaluated are descri